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12P10-TN3-R 数据表(PDF) 4 Page - VBsemi Electronics Co.,Ltd |
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12P10-TN3-R 数据表(HTML) 4 Page - VBsemi Electronics Co.,Ltd |
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4 / 9 page ![]() TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Source-Drain Diode Forward Voltage Capacitance On-Resistance vs. Junction Temperature 0.1 1 10 100 0.0 0.3 0.6 0.9 1.2 TJ = 25 °C TJ = 150 °C VSD - Source-to-Drain Voltage (V) Crss 0 400 800 1200 1600 0 20406080 100 Ciss Coss VDS - Drain-to-Source Voltage (V) 0.5 0.9 1.3 1.7 2.1 - 50 - 25 0 25 50 75 100 125 150 ID =3.6 A VGS =4.5 V VGS =10V TJ - Junction Temperature (°C) Threshold Voltage Drain Source Breakdown vs. Junction Temperature Current Derating - 2.3 - 2.0 - 1.7 - 1.4 - 1.1 - 50 - 25 0 25 50 75 100 125 150 ID = 250 μA TJ - Temperature (°C) - 130 - 124 - 118 - 112 - 106 - 100 - 50 - 25 0 25 50 75 100 125 150 ID = 250 μA T J - Junction Temperature (°C) 0 2 4 6 8 10 0 25 50 75 100 125 150 TC - Case Temperature (°C) www.VBsemi.tw E-mail:China@VBsemi TEL:86-755-83251052 12P10-TN3-R 4 |
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