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12P10-TN3-R 数据表(PDF) 1 Page - VBsemi Electronics Co.,Ltd |
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12P10-TN3-R 数据表(HTML) 1 Page - VBsemi Electronics Co.,Ltd |
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1 / 9 page ![]() P-Channel 100 V (D-S) MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Power Switch • DC/DC Converters PRODUCT SUMMARY VDS (V) RDS(on) (Ω)ID (A) Qg (Typ.) - 100 0.250 at VGS = - 10 V - 8.8 11.7 0.280 at VGS = - 4.5 V - 8.0 TO-252 S GD Top View Drain Connected to Tab S G D P-Channel MOSFET Notes: a. Duty cycle ≤ 1 %. b. See SOA curve for voltage derating. c. When Mounted on 1" square PCB (FR-4 material). ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted Parameter Symbol Limit Unit Drain-Source Voltage VDS - 100 V Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C) TC = 25 °C ID - 8.8 A TC = 70 °C - 7.1 Pulsed Drain Current IDM - 25 Avalanche Current IAS - 18 Single Avalanche Energya L = 0.1 mH EAS 16.2 mJ Maximum Power Dissipationa TC = 25 °C PD 32.1b W TA = 25 °C c 2.5 Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C THERMAL RESISTANCE RATINGS Parameter Symbol Limit Unit Junction-to-Ambient (PCB Mount)c RthJA 50 °C/W Junction-to-Case (Drain) RthJC 3.9 TO-251 S D G Top View www.VBsemi.tw E-mail:China@VBsemi TEL:86-755-83251052 12P10-TN3-R 1 |
类似零件编号 - 12P10-TN3-R |
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类似说明 - 12P10-TN3-R |
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