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FS32K142MHTXMLLTR 数据表(PDF) 30 Page - NXP Semiconductors

部件名 FS32K142MHTXMLLTR
功能描述  Low-power Arm Cortex-M4F/M0 core with excellent energy efficiency
PDF  100 Pages
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制造商  NXP [NXP Semiconductors]
网页  http://www.nxp.com
标志 NXP - NXP Semiconductors

FS32K142MHTXMLLTR 数据表(HTML) 30 Page - NXP Semiconductors

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4. The value given is measured at high drive strength mode. For value at low drive strength mode see the Ioh_Standard
value given above.
5. For refernce only. Run simulations with the IBIS model and custom board for accurate results.
6. Several I/O have both high drive and normal drive capability selected by the associated Portx_PCRn[DSE] control bit. All
other GPIOs are normal drive only. For details see IO Signal Description Input Multiplexing sheet(s) attached with the
Reference Manual.
7. When using ENET and SAI on S32K148, the overall device limits associated with high drive pin configurations must be
respected i.e. On 144-pin LQFP the general purpose pins: PTA10, PTD0, and PTE4 must be set to low drive.
8. Measured at input V = VSS
9. Measured at input V = VDD
Table 18. DC electrical specifications at 3.3 V Range for S32K14xW series
Symbol
Parameter
Value
Unit
Notes
Min.
Typ.
Max.
VDD
I/O Supply Voltage
3.13
3.3
4
V
Vih
Input Buffer High Voltage
0.7 × VDD
—
VDD + 0.3
V
1
Vil
Input Buffer Low Voltage
VSS − 0.3
—
0.3 × VDD
V
2
Vhys
Input Buffer Hysteresis
0.06 × VDD
—
—
V
IohGPIO
IohGPIO-HD_DSE_0
I/O current source capability measured when
pad Voh = (VDD − 0.8 V)
3.5
—
—
mA
IolGPIO
IolGPIO-HD_DSE_0
I/O current sink capability measured when
pad Vol = 0.8 V
3
—
—
mA
IohGPIO-HD_DSE_1
I/O current source capability measured when
pad Voh = (VDD − 0.8 V)
14
—
—
mA
3
IolGPIO-HD_DSE_1
I/O current sink capability measured when
pad Vol = 0.8 V
12
—
—
mA
3
IOHT
Output high current total for all ports
—
—
100
mA
IIN
Input leakage current (per pin) for full temperature range at VDD = 3.3 V
4
All pins other than high drive port pins
0.005
0.5
μA
High drive port pins
0.010
0.5
μA
RPU
Internal pullup resistors
20
60
kΩ
5
RPD
Internal pulldown resistors
20
60
kΩ
6
1. For reset pads, same Vih levels are applicable
2. For reset pads, same Vil levels are applicable
3. The value given is measured at high drive strength mode. For value at low drive strength mode see the Ioh_Standard
value given above.
4. Several I/O have both high drive and normal drive capability selected by the associated Portx_PCRn[DSE] control bit. All
other GPIOs are normal drive only. For details see IO Signal Description Input Multiplexing sheet(s) attached with the
Reference Manual.
5. Measured at input V = VSS
6. Measured at input V = VDD
I/O parameters
S32K1xx Data Sheet, Rev. 12, 02/2020
30
NXP Semiconductors



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