P062ABD8 datasheet(1/5 Pages) UNIKC

部件名	P062ABD8

功能描述	N-Channel Enhancement Mode MOSFET

PDF	5 Pages

Scroll/Zoom	100%

制造商	UNIKC [Wuxi U-NIKC Semiconductor CO.,LTD]

网页	http://www.unikc.com.cn/

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P062ABD8

N-Channel Enhancement Mode MOSFET

PRODUCT SUMMARY

V(BR)DSS

TO-252

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)

THERMAL RESISTANCE RATINGS

UNITS

1Pulse width limited by maximum junction temperature.

IAS

Pulsed Drain Current

1

Avalanche Current

3.5

RqJA

Junction-to-Case

Lead Temperature (

1/

16” from case for 10 sec.)

ID

Gate-Source Voltage

30

EAS

THERMAL RESISTANCE

TC= 100°C

Operating Junction & Storage Temperature Range

SYMBOL

ID

TC= 25 °C

25V

Continuous Drain Current

TC= 100 °C

PARAMETERS/TEST CONDITIONS

RDS(ON)

Junction-to-Ambient

6mΩ @V

GS = 10V

60A

TC= 25 °C

Avalanche Energy

L=0.1mH

Power Dissipation

Tj, Tstg

IDM

TYPICAL

PD

RqJC

°C / W

SYMBOL

60

LIMITS

150

38

131

VGS

±20

36

A

-55 to 150

MAXIMUM

mJ

14

V

W

40

°C

TL

275

UNITS

REV 1.0

1

2014/4/29

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