P062ABD8 datasheet(2/5 Pages) UNIKC

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P062ABD8

N-Channel Enhancement Mode MOSFET

ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise Noted)

MIN

TYP

MAX

±100

150

7.8

9.3

1740

504

338

37.2

6.8

8.5

111

1.16

1Pulse test : Pulse Width

 300 msec, Duty Cycle  2％.

2Independent of operating temperature.

UNITS

SYMBOL

TEST CONDITIONS

VDS = 0.5V(BR)DSS, VGS = 10V,

ID = 30A

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

IGSS

Gate Threshold Voltage

VGS =10V, ID =30A

gfs

Fall Time

VDS = VGS, ID = 250mA

trr

VSD

VDS = 15V , RL = 3Ω

ID≌5A, VGS = 10V, RGEN =6Ω

td(on)

td(off)

Gate-Source Charge

Reverse Transfer Capacitance

Turn-On Delay Time

Rise Time

V(BR)DSS

Drain-Source On-State

Resistance

Ciss

Gate-Body Leakage

Input Capacitance

Qrr

Reverse Recovery Charge

Continuous Current

Forward Voltage

Reverse Recovery Time

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25 °C)

Total Gate Charge

PARAMETER

Output Capacitance

VGS = 0V, VDS = 25V, f = 1MHz

VGS(th)

IF = IS, VGS = 0V

Qgd

Qgs

DYNAMIC

VDS =24V, VGS = 0V

VGS = 0V, ID = 250mA

VDS =15V, ID =24A

mΩ

Turn-Off Delay Time

Gate-Drain Charge

Gate Resistance

VGS = 0V, VDS = 0V, f = 1MHz

VDS = 0V, VGS = ±20V

IDSS

Coss

Crss

LIMITS

STATIC

Forward Transconductance

VDS =20V, VGS = 0V, TJ = 55°C

VGS =4.5V, ID =30A

On-State Drain Current

ID(ON)

VDS = 10V, VGS = 10V

RDS(ON)

REV 1.0

2014/4/29

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