IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:

4,835,592

4,881,106

5,017,508

5,049,961

5,187,117

5,486,715

4,850,072

4,931,844

5,034,796

5,063,307

5,237,481

5,381,025

IXYS reserves the right to change limits, test conditions, and dimensions.

IXFK 73N30

IXFN 73N30

Fig.10 Transient Thermal Impedance

Time - Seconds

0.001

0.01

0.1

1

0.01

0.1

V

0

5

10

15

20

25

0

1000

2000

3000

4000

5000

6000

7000

8000

9000

10000

C

rss

V

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

0

20

40

60

80

100

120

140

160

Gate Charge - nCoulombs

0

50

100 150 200 250 300 350 400

0

2

4

6

8

10

C

oss

V

I

I

T

C

iss

f = 1MHz

V

T

Fig.7 Gate Charge Characteristic Curve

Fig.8 Capacitance Curves

Fig.9 Source Current vs. Source

to Drain Voltage