IXFN73N30 datasheet(1/4 Pages) IXYS

部件名	IXFN73N30

功能描述	HiPerFET Power MOSFETs

PDF	4 Pages

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制造商	IXYS [IXYS Corporation]

网页	http://www.ixys.com

标志

1 / 4 page

Symbol

Test Conditions

Maximum Ratings

IXFK

IXFN

V

DSS

T

J

= 25°C to 150°C

300

V

DGR

T

J

= 25°C to 150°C; R

GS = 1 MΩ

300

V

GS

Continuous

±20

V

GSM

Transient

±30

V

I

D25

T

C

= 25°C

73

A

I

DM

T

C

= 25°C, pulse width limited by T

JM

292

A

I

AR

T

C

= 25°C

40

A

E

AR

T

C

= 25°C

30

mJ

dv/dt

I

S

≤ I

DM, di/dt ≤ 100 A/µs, VDD ≤ VDSS,

5

V/ns

T

J

≤ 150°C, R

G = 2 W

P

D

T

C

= 25°C

500

520

W

T

J

-55 ... +150

° C

T

JM

150

° C

T

stg

-55 ... +150

° C

T

L

1.6 mm (0.063 in) from case for 10 s

300

-

° C

V

ISOL

50/60 Hz, RMS

t = 1 min

-

2500

V~

I

ISOL ≤ 1 mA

t = 1 s

-

3000

V~

M

d

Mounting torque

0.9/6

1.5/13 Nm/lb.in.

Terminalconnectiontorque

-

1.5/13 Nm/lb.in.

Weight

10

30

g

HiPerFETTM

Power MOSFETs

N-Channel Enhancement Mode

Avalanche Rated, High dv/dt, Low t

rr

Features

l Internationalstandardpackages

l JEDEC TO-264 AA, epoxy meet

UL94V-0, flammability classification

l miniBLOC with Aluminium nitride

isolation

l Low R

DS (on) HDMOS

TM process

l Rugged polysilicon gate cell structure

l Unclamped Inductive Switching (UIS)

rated

l Lowpackageinductance

l FastintrinsicRectifier

Applications

l DC-DC converters

l Synchronousrectification

l Batterychargers

l Switched-mode and resonant-mode

power supplies

l DC choppers

l Temperatureandlightingcontrols

l Low voltage relays

Advantages

l Easy to mount

l Space savings

l High power density

Symbol

Test Conditions

Characteristic Values

(T

J = 25°C, unless otherwise specified)

min.

typ.

max.

V

DSS

V

GS = 0 V, ID = 1 mA

300

V

GS(th)

V

DS = VGS, ID = 8 mA

2

4

V

I

GSS

V

GS = ±20 VDC, VDS = 0

±200

nA

I

DSS

V

DS = 0.8

V

DSS

T

J = 25°C

400

uA

V

GS = 0 V

T

J = 125°C

2

mA

R

DS(on)

V

GS = 10 V, ID = 0.5

I

D25

45

m

Ω

Pulse test, t

≤ 300 µs, duty cycle d ≤ 2 %

TO-264 AA (IXFK)

S

G

D

G = Gate

D = Drain

S = Source

TAB = Drain

Either Source terminal at miniBLOC can be used

as Main or Kelvin Source

S

G

S

D

92805J (11/01)

miniBLOC, SOT-227 B (IXFN)

E153432

(TAB)

V

DSS

I

D25

R

DS(on)

IXFK 73 N 30

300 V

73 A

45 m

Ω

IXFN 73 N 30

300 V

73 A

45 m

Ω

t

rr ≤

≤≤≤≤ 200 ns

类似零件编号 - IXFN73N30

制造商	部件名	数据表	功能描述
IXYS Corporation	IXFN73N30Q	98Kb / 2P	HiPerFET Power MOSFETs Q-Class

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More results

IXFN73N30 数据表(PDF) 1 Page - IXYS Corporation

IXFN73N30 数据表(HTML) 1 Page - IXYS Corporation

类似零件编号 - IXFN73N30

类似说明 - IXFN73N30

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链接网址

IXFN73N30 数据表(PDF) 1 Page - IXYS Corporation

IXFN73N30 数据表(HTML) 1 Page - IXYS Corporation

类似零件编号 - IXFN73N30

类似说明 - IXFN73N30

Html Pages

1 2 3 4

数据表 下载

链接网址

数据表下载