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LTC4367 数据表(PDF) 21 Page - Analog Devices

部件名 LTC4367
功能描述  Fast 150V Protected High Side NMOS Static Switch Driver
PDF  30 Pages
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制造商  AD [Analog Devices]
网页  http://www.analog.com
标志 AD - Analog Devices

LTC4367 数据表(HTML) 21 Page - Analog Devices

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LTC7000/LTC7000-1
21
Rev. E
For more information www.analog.com
APPLICATIONS INFORMATION
UVLO to 8.0V. The value of RVCCUV is calculated and
rounded to the nearest standard value as follows:
RVCCUV =
8.0V
70µA
= 113kΩ
The value of the current sense resistor, RSNS is calculated
next. The LTC7000-1 has a fixed current sense thresh-
old, ΔVTH, of 30mV typical and 22mV minimum. To pro-
vide a minimum 3A load current, the minimum specified
ΔVTH = 22mV should be used for the RSNS calculation
below:
RSNS =
22mV
3A
= 7.3mΩ
The closest standard value is 7mΩ. The power dissipation
of RSNS is 63mW so choose a power rating of greater than
0.25W to provide adequate margin.
The next item to check is to make sure the insertion loss
specification is satisfied. The insertion loss is given by:
PLOSS = ILOAD
2 • R
DS(ON)(MAX) + RSNS
(
)
= 3A
2 • 0.043Ω + 0.007Ω
(
) = 0.45W
Which meets the design specification of less than 0.5W.
The fast output slew rate specification of 1V/µs into a 1µF
load can be met by placing a resistor, RG, in series with
the TGUP pin to the MOSFET gate, as well as connecting
TGDN and a capacitor, CG, to ground on the MOSFET
gate. The values of RG and TG can be calculated from the
following expression:
RG • CG
0.7 • 12V
1V / µs
= 8.4µs
CG needs to have a voltage rating as high as the BVDSS
of the MOSFET. A good choice for CG is the AVX
06032C471KAT2A which has a value of 470pF and a volt-
age rating of 200V. RG is then calculated to be 17.8kΩ.
The bootstrap capacitor CB can be calculated from the
gate charge as specified in the MOSFET data sheet and
CG as follows:
CB >
QG
1V
+ 10 • CG =
30nC
1V
+ 10 • 470pF
≅ 0.33nF. 100nF will be used.
To meet the short-circuit specification, the TIMER pin
should be connected to VCC to enable immediate turn-off
(approximately 70ns) of the MOSFET in the case of an
overcurrent condition. If an overcurrent condition turns
off the MOSFET, it will not turn back on until the INP pin
has cycled low then back high.
The complete circuit is shown in Figure 15.
Figure 15. Design Example
0.1µF
CG
470pF
200V
1µF
1µF
SNS+
SNS–
VIN
VCC
TIMER
FAULT
INP
VCCUV
17.8k
7000 F15
LTC7000-1
0.007
IRF7815TRPBF
LOAD
8V TO 135V
3A CONTINUOUS MODE
VIN
8V TO 135V
113k
GND
10
100
TGUP
TGDN
BST
TS
Turn–On Transient
VIN = 135V
50µs/DIV
VINP
5V/DIV
VLOAD
50V/DIV
IDMOSFET
1A/DIV
7000 F15b



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