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ISCNL247P 数据表(PDF) 2 Page - Inchange Semiconductor Company Limited |
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ISCNL247P 数据表(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 3 page ![]() isc website:www.iscsemi.com isc & iscsemi is registered trademark 2 isc N-Channel MOSFET Transistor ISCNL247P ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYPE MAX UNIT V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= 0.25mA 100 V VGS(th) Gate Threshold Voltage VDS= 5V; ID= 0.25mA 1.4 2.4 V RDS(on) Drain-Source On-Resistance VGS= 10V; ID= 15A VGS= 4.5V; ID= 10A 19 28 mΩ IGSS Gate-Body Leakage Current VGS= ±20V;VDS= 0 ± 100 nA IDSS Zero Gate Voltage Drain Current VDS= 100V; VGS= 0 VDS= 100V; VGS= 0@TJ= 100℃ 1 100 μ A VSD Forward On-Voltage IS= 15A; VGS= 0 1.2 V gfs Transconductance VDS=5V, ID=15A 42 S Qg (10V) Total Gate Charge VDD=50V, ID=15A, VGS=10V 16 nC Qg (4.5V) Total Gate Charge 9 Qgs Gate to Source Charge 3 Qgd Gate to Drain (Miller) Charge 3 Ciss Input Capacitance VGS=0V, VDS=50V, f=1MHz 840 pF Coss Output Capacitance 147 Crss Reverse Transfer Capacitance 4.9 td(on) Turn on Delay Time VDD=50V, ID=15A, VGS=10V, RG=10Ω 6 ns tr Rise time 3 d(off) Turn off Delay Time 13 tf Fall Time 3 |
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