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ISCNL247P 数据表(PDF) 1 Page - Inchange Semiconductor Company Limited |
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ISCNL247P 数据表(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 3 page  isc website：www.iscsemi.com isc & iscsemi is registered trademark 1 isc N-Channel MOSFET Transistor ISCNL247P FEATURES · Drain Current –ID= 45A@ TC=25℃ · Drain Source Voltage- : VDSS= 100V(Min) · Static Drain-Source On-Resistance : RDS(on) = 19mΩ(Max) · 100% avalanche tested · Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION · Synchronous Rectification in SMPS · Hard Switching and High Speed Circuit · Power Tools · Motor Contro ABSOLUTE MAXIMUM RATINGS(Ta=25℃) THERMAL CHARACTERISTICS SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 100 V VGS Gate-Source Voltage-Continuous ± 20 V ID Drain Current-Continuous 45 A IDM Drain Current-Single Pluse 200 A PD Total Dissipation @TC=25℃ 208 W TJ Max. Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 0.6 ℃ /W |
类似零件编号 - ISCNL247P |
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类似说明 - ISCNL247P |
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