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STL36N60M6 数据表(PDF) 7 Page - STMicroelectronics

部件名 STL36N60M6
功能描述  N-channel 600 V, 91 mΩ typ., 25 A MDmesh™M6 Power MOSFET in a PowerFLAT™8x8 HV package
PDF  15 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STL36N60M6 数据表(HTML) 7 Page - STMicroelectronics

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Test circuits
Figure 13. Switching times test circuit for resistive load
AM15855v1
VGS
PW
VD
RG
RL
D.U.T.
2200
µF
3.3
µF
VDD
GND2
(power)
GND1
(driver signal)
+
Figure 14. Test circuit for gate charge behavior
AM15856v1
VDD
47kΩ
1kΩ
47kΩ
2.7kΩ
1kΩ
12V
Vi ≤ VGS
2200
µF
PW
IG=CONST
100Ω
100nF
D.U.T.
VG
GND1
GND2
+
Figure 15. Test circuit for inductive load switching and
diode recovery times
AM15857v1
A
D
D.U.T.
S
B
G
25Ω
A
A
B
B
RG
G
FAST
DIODE
D
S
L=100µH
µF
3.3
1000
µF
VDD
GND1
GND2
D.U.T.
+
Figure 16. Unclamped inductive load test circuit
AM15858v1
Vi
Pw
VD
ID
D.U.T.
L
2200
µF
3.3
µF
VDD
GND1
GND2
+
Figure 17. Unclamped inductive waveform
AM01472v1
V(BR)DSS
VDD
VDD
VD
IDM
ID
Figure 18. Switching time waveform
AM01473v1
0
VGS
90%
VDS
90%
10%
90%
10%
10%
ton
td(on)
tr
0
toff
td(off)
tf
STL36N60M6
Test circuits
DS11134 - Rev 4
page 7/15



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