STL36N60M6 datasheet(2/15 Pages) STMICROELECTRONICS

部件名	STL36N60M6

功能描述	N-channel 600 V, 91 mΩ typ., 25 A MDmesh™M6 Power MOSFET in a PowerFLAT™8x8 HV package

PDF	15 Pages

Scroll/Zoom	100%

制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

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Electrical ratings

Table 1. Absolute maximum ratings

Symbol

Parameter

Value

Unit

VGS

Gate-source voltage

±25

Drain current (continuous) at TC = 25 °C

Drain current (continuous) at TC = 100 °C

15.6

IDM (1)

Drain current (pulsed)

100

PTOT

Total dissipation at TC = 25 °C

160

dv/dt(2)

Peak diode recovery voltage slope

V/ns

dv/dt(3)

MOSFET dv/dt ruggedness

V/ns

Tstg

Storage temperature range

-55 to 150

°C

Operating junction temperature range

1. Pulse width limited by safe operating area.

2. ISD ≤ 25 A, di/dt ≤ 400 A/µs; VDS(peak) < V(BR)DSS, VDD = 400 V.

3. VDS ≤ 480 V

Table 2. Thermal data

Symbol

Parameter

Value

Unit

Rthj-case

Thermal resistance junction-case

0.78

°C/W

Rthj-pcb (1)

Thermal resistance junction-pcb

°C/W

1. When mounted on FR-4 board of inch², 2oz Cu.

Table 3. Avalanche characteristics

Symbol

Parameter

Value

Unit

IAR

Avalanche current, repetitive or not repetitive

(pulse width limited by Tjmax)

EAS

Single pulse avalanche energy (starting Tj = 25 °C, ID = IAR;

VDD = 50 V)

750

STL36N60M6

Electrical ratings

DS11134 - Rev 4

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