STM32L552CEU6PTR datasheet(148/340 Pages) STMICROELECTRONICS

148 / 340 page

Electrical characteristics

STM32L552xx

148/340

DS12737 Rev 6

5.3.3

Operating conditions at power-up / power-down

The parameters given in Table 30 are derived from tests performed under the ambient

temperature condition summarized in Table 27.

5.3.4

Embedded reset and power control block characteristics

The parameters given in Table 31 are derived from tests performed under the ambient

temperature conditions summarized in Table 27: General operating conditions.

Table 30. Operating conditions at power-up / power-down(1)

At power-up, the VDD12 voltage should not be forced externally.

Symbol

Parameter

Conditions

Min

Max

Unit

tVDD

VDD rise time rate

∞

µs/V

VDD fall time rate

∞

tVDDA

VDDA rise time rate

∞

VDDA fall time rate

∞

tVDDUSB

VDDUSB rise time rate

∞

VDDUSB fall time rate

∞

tVDDIO2

VDDIO2 rise time rate

∞

VDDIO2 fall time rate

∞

Table 31. Embedded reset and power control block characteristics

Symbol

Parameter

Conditions(1)

Min

Typ

Max

Unit

tRSTTEMPO(2)

Reset temporization after

BOR0 is detected

VDD rising

250

400

μs

VBOR0(2)

Brown-out reset threshold 0

Rising edge

1.62

1.66

1.7

Falling edge

1.6

1.64

1.69

VBOR1

Brown-out reset threshold 1

Rising edge

2.06

2.1

2.14

Falling edge

1.96

2.04

VBOR2

Brown-out reset threshold 2

Rising edge

2.26

2.31

2.35

Falling edge

2.16

2.20

2.24

VBOR3

Brown-out reset threshold 3

Rising edge

2.56

2.61

2.66

Falling edge

2.47

2.52

2.57

VBOR4

Brown-out reset threshold 4

Rising edge

2.85

2.90

2.95

Falling edge

2.76

2.81

2.86

VPVD0

Programmable voltage

detector threshold 0

Rising edge

2.1

2.15

2.19

Falling edge

2.05

2.1

VPVD1

PVD threshold 1

Rising edge

2.26

2.31

2.36

Falling edge

2.15

2.20

2.25

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