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STM32L552CEU6PTR 数据表(PDF) 149 Page - STMicroelectronics

部件名 STM32L552CEU6PTR
功能描述  Ultra-low-power Arm® Cortex®-M33 32-bit MCUTrustZone®FPU, 165 DMIPS, up to 512 KB Flash memory, 256 KB SRAM, SMPS
PDF  340 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STM32L552CEU6PTR 数据表(HTML) 149 Page - STMicroelectronics

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DS12737 Rev 6
149/340
STM32L552xx
Electrical characteristics
307
VPVD2
PVD threshold 2
Rising edge
2.41
2.46
2.51
V
Falling edge
2.31
2.36
2.41
VPVD3
PVD threshold 3
Rising edge
2.56
2.61
2.66
V
Falling edge
2.47
2.52
2.57
VPVD4
PVD threshold 4
Rising edge
2.69
2.74
2.79
V
Falling edge
2.59
2.64
2.69
VPVD5
PVD threshold 5
Rising edge
2.85
2.91
2.96
V
Falling edge
2.75
2.81
2.86
VPVD6
PVD threshold 6
Rising edge
2.92
2.98
3.04
V
Falling edge
2.84
2.90
2.96
Vhyst_BORH0
Hysteresis voltage of BORH0
Hysteresis in
continuous
mode
-20
-
mV
Hysteresis in
other mode
-30
-
Vhyst_BOR_PVD
Hysteresis voltage of BORH
(except BORH0) and PVD
--
100
-
mV
IDD
(BOR_PVD)(2)
BOR(3) (except BOR0) and
PVD consumption from VDD
--
1.1
1.6
µA
VPVM3
VDDA peripheral voltage
monitoring
Rising edge
1.61
1.65
1.69
V
Falling edge
1.6
1.64
1.68
VPVM4
VDDA peripheral voltage
monitoring
Rising edge
1.78
1.82
1.86
V
Falling edge
1.77
1.81
1.85
Vhyst_PVM3
PVM3 hysteresis
-
-
10
-
mV
Vhyst_PVM4
PVM4 hysteresis
-
-
10
-
mV
IDD
(PVM1/PVM2)
(2)
PVM1 and PVM2
consumption from VDD
--
0.2
-
µA
IDD
(PVM3/PVM4)
(2)
PVM3 and PVM4
consumption from VDD
--
2
-
µA
1. Continuous mode means Run/Sleep modes, or temperature sensor enable in Low-power run/Low-power
sleep modes.
2. Guaranteed by design.
3. BOR0 is enabled in all modes (except shutdown) and its consumption is therefore included in the supply
current characteristics tables.
Table 31. Embedded reset and power control block characteristics (continued)
Symbol
Parameter
Conditions(1)
Min
Typ
Max
Unit



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