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STM32L552CEU6PTR 数据表(PDF) 296 Page - STMicroelectronics |
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STM32L552CEU6PTR 数据表(HTML) 296 Page - STMicroelectronics |
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296 / 340 page  Electrical characteristics STM32L552xx 296/340 DS12737 Rev 6 Figure 65. NAND controller waveforms for common memory read access Figure 66. NAND controller waveforms for common memory write access Table 144. Switching characteristics for NAND Flash read cycles(1) 1. Guaranteed by characterization results, not tested in production. Symbol Parameter Min Max Unit Tw(N0E) FMC_NOE low width 4THCLK - 0.5 4THCLK+0.5 ns Tsu(D-NOE) FMC_D[15-0] valid data before FMC_NOE high 14 - Th(NOE-D) FMC_D[15-0] valid data after FMC_NOE high 0 - Td(ALE-NOE) FMC_ALE valid before FMC_NOE low - 3THCLK-1 Th(NOE-ALE) FMC_NWE high to FMC_ALE invalid 3THCLK-0.5 - MSv38005V1 FMC_NWE FMC_NOE FMC_D[15:0] tw(NOE) tsu(D-NOE) th(NOE-D) ALE (FMC_A17) CLE (FMC_A16) FMC_NCEx td(NCE-NOE) th(NOE-ALE) MSv38006V1 tw(NWE) th(NWE-D) tv(NWE-D) FMC_NWE FMC_NOE FMC_D[15:0] td(D-NWE) ALE (FMC_A17) CLE (FMC_A16) FMC_NCEx td(NCE-NWE) th(NOE-ALE) |
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