STM32L412R8U3PXXX datasheet(95/192 Pages) STMICROELECTRONICS

95 / 192 page

DS12469 Rev 8

95/192

STM32L412xx

Electrical characteristics

164

Table 38. Typical current consumption in Run, with different codes running from

SRAM1 and power supplied by external SMPS (VDD12 = 1.10 V)

Symbol

Parameter

Conditions(1)

TYP

Unit

TYP

Unit

Voltage

scaling

Code

25 °C

IDD_ALL

(Run)

Supply

current in

Run mode

fHCLK = fHSE up to

48 MHz included,

bypass mode

PLL ON above

48 MHz all

peripherals disable

Reduced code(2)

0.86

µA/MHz

Coremark

0.86

Dhrystone 2.1

0.88

Fibonacci

0.86

While(1)

0.80

Reduced code(2)

3.08

Coremark

3.02

Dhrystone 2.1

3.08

Fibonacci

3.06

While(1)

2.85

1. All values are obtained by calculation based on measurements done without SMPS and using following parameters: SMPS

input = 3.3 V, SMPS efficiency = 85%, VDD12 = 1.10 V

2. Reduced code used for characterization results provided in Table 25, Table 27, Table 29.

Table 39. Typical current consumption in Run, with different codes running from

SRAM1 and power supplied by external SMPS (VDD12 = 1.00 V)

Symbol

Parameter

Conditions(1)

TYP

Unit

TYP

Unit

Voltage

scaling

Code

25 °C

IDD_ALL

(Run)

Supply

current in

Run mode

fHCLK = fHSE up to

48 MHz included,

bypass mode

PLL ON above

48 MHz all

peripherals disable

Reduced code(2)

0.71

µA/MHz

Coremark

0.71

Dhrystone 2.1

0.73

Fibonacci

0.71

While(1)

0.66

1. All values are obtained by calculation based on measurements done without SMPS and using following parameters: SMPS

input = 3.3 V, SMPS efficiency = 85%, VDD12 = 1.00 V

2. Reduced code used for characterization results provided in Table 25, Table 27, Table 29.

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