STTH602CSFY datasheet(2/10 Pages) STMICROELECTRONICS

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Characteristics

Table 1. Absolute ratings (limiting values per diode at 25 °C, unless otherwise specified)

Symbol

Parameter

Value

Unit

VRRM

Repetitive peak reverse voltage (Tj = -40 °C to +175 °C)

200

IF(AV)

Average forward current, δ = 0.5

Per diode

Tc = 155 °C

Per device

Tc = 155 °C

IFSM

Surge non repetitive forward current

tp = 10 ms sinusoidal

Tstg

Storage temperature range

-65 to +175

°C

Operating junction temperature range

-40 to +175

°C

Table 2. Thermal resistance parameters

Symbol

Parameter

Typ.

Unit

Rth(j-c)

Junction to case

Total

2.14

°C/W

For more information, please refer to the following application note:

•

AN5088: Rectifiers thermal management, handling and mounting recommendations

Table 3. Static electrical characteristics (per diode)

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

IR(1)

Reverse leakage current

Tj = 25 °C

VR = VRRM

µA

Tj = 125 °C

VF(2)

Forward voltage drop

Tj = 25 °C

IF = 3 A

0.92

1.06

Tj = 125 °C

0.80

0.92

Tj = 25 °C

IF = 6 A

1.02

1.17

Tj = 125 °C

0.90

1.04

1. Pulse test: tp = 5 ms, δ < 2%

2. Pulse test: tp = 380 µs, δ < 2%

To evaluate the conduction losses, use the following equation:

P = 0.80 x IF(AV) + 0.040 x IF2(RMS)

For more information, please refer to the following application notes related to the power losses:

•

AN604: Calculation of conduction losses in a power rectifier

•

AN4021: Calculation of reverse losses in a power diode

STTH602CSFY

Characteristics

DS13549 - Rev 1

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