STTH602CSFY datasheet(4/10 Pages) STMICROELECTRONICS

4 / 10 page

1.1

Characteristics (curves)

Figure 1. Conduction losses versus average forward

current (per diode)

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

PF(AV)(W)

IF(AV)(A)

= 0.05

= 0.2

= 0.1

= 0.

= 1

=tp/T

Figure 2. Forward voltage drop versus forward current

(typical values, per diode)

1.0E-02

1.0E-01

1.0E+00

1.0E+01

1.0E+02

0.5

1.0

1.5

2.0

T j = 25 °C

T j = 150 °C

F(A)

F(V)

T j = 125 °C

Figure 3. Forward voltage drop versus forward current

(maximum values, per diode)

1.0E-02

1.0E-01

1.0E+00

1.0E+01

1.0E+02

0.0

0.5

1.0

1.5

2.0

2.5

T j = 25 °C

T j = 150 °C

F(A)

F(V)

T j = 125 °C

Figure 4. Relative variation of thermal impedance junction

to case total versus pulse duration

th(j-c) / Rth(j-c)

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.E-04

1.E-03

1.E-02

1.E-01

1.E+00

PSMC (TO-277A)

Single pulse

p(s)

Figure 5. Peak reverse recovery current versus dIF/dt

(typical values, per diode)

100

200

300

400

500

RM(A)

R = 160 V

j = 125 °C

F = IF(AV)

dIF/dt(A/µs)

Figure 6. Reverse recovery time versus dIF/dt (typical

values, per diode)

100

200

300

400

500

trr (ns)

dIF/dt(A/µs)

R = 160 V

j = 125 °C

F = IF(AV)

STTH602CSFY

Characteristics (curves)

DS13549 - Rev 1

page 4/10

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