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STTH1002CSFY 数据表(PDF) 2 Page - STMicroelectronics |
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STTH1002CSFY 数据表(HTML) 2 Page - STMicroelectronics |
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2 / 10 page ![]() 1 Characteristics Table 1. Absolute ratings (limiting values at 25 °C, unless otherwise specified, per diode) Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage (Tj = -40 °C to +175 C) 200 V IF(AV) Average forward current, δ = 0.5 Per diode Tc = 160 °C 5 A Per device Tc = 160 °C 10 IFSM Surge non repetitive forward current tp = 10 ms sinusoidal 85 A Tstg Storage temperature range -65 to +175 °C Tj Operating junction temperature range -40 to +175 °C Table 2. Thermal resistance parameters Symbol Parameter Typ. Unit Rth(j-c) Junction to case Per diode 2.45 °C/W Per device 1.66 Rth(c) Coupling 0.87 °C/W For more information, please refer to the following application note: • AN5088: Rectifiers thermal management, handling and mounting recommendations When the diodes 1 and 2 are used simultaneously: ΔTj (diode1) = P(diode1) x Rth(j-c) (per diode) + P(diode2) x Rth(c) Table 3. Static electrical characteristics (per diode) Symbol Parameter Test conditions Min. Typ. Max. Unit IR(1) Reverse leakage current Tj = 25 °C VR = VRRM - 4 µA Tj = 125 °C - 4 40 VF(2) Forward voltage drop Tj = 25 °C IF = 5 A - 0.91 1.05 V Tj = 125 °C - 0.79 0.91 Tj = 25 °C IF = 10 A - 1.02 1.17 Tj = 125 °C - 0.90 1.04 1. Pulse test: tp = 5 ms, δ < 2% 2. Pulse test: tp = 380 µs, δ < 2% To evaluate the conduction losses, use the following equation: P = 0.78 x IF(AV) + 0.026 x IF2(RMS) For more information, please refer to the following application notes related to the power losses: • AN604: Calculation of conduction losses in a power rectifier • AN4021: Calculation of reverse losses in a power diode STTH1002CSFY Characteristics DS13536 - Rev 1 page 2/10 |
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