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STTH1002CSFY 数据表(PDF) 3 Page - STMicroelectronics |
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STTH1002CSFY 数据表(HTML) 3 Page - STMicroelectronics |
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3 / 10 page  Table 4. Dynamic characteristics per diode at Tj = 25°C, unless otherwise specified Symbol Parameter Test conditions Min. Typ. Max. Unit trr Reverse recovery time Tj = 25 °C IF = 1 A, dIF /dt = -50 A/µs, VR = 30 V - 28 35 ns IF = 1 A, dIF /dt = -100 A/µs, VR = 30 V - 21 27 IRM Reverse recovery current Tj = 125 °C IF = 5 A, dIF/dt = -200 A/µs, VR = 160 V - 6.3 A STTH1002CSFY Characteristics DS13536 - Rev 1 page 3/10 |
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