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ASPM34 数据表(PDF) 8 Page - ON Semiconductor

部件名 ASPM34
功能描述  Automotive 3?뭁hase 1200 V, 35 A IGBT Intelligent Power Module
PDF  15 Pages
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制造商  ONSEMI [ON Semiconductor]
网页  http://www.onsemi.com
标志 ONSEMI - ON Semiconductor

ASPM34 数据表(HTML) 8 Page - ON Semiconductor

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BOOTSTRAP DIODE PART (TJ as specified)
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
VF
Forward Voltage
IF = 1.0 A, TJ = 25°C
2.2
V
trr
Reverse−Recovery Time
IF = 1.0 A, dIF/dt = 50 A/ms, TJ = 25°C
80
ns
CONTROL PART (TJ = 25°C)
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
IQDDH
Quiescent VDD Supply Current
VDD(H) = 15 V,
IN(UH,VH.WH) = 0 V
VDD(UH) − COM(H),
VDD(VH) − COM(H),
VDD(WH) − COM(H)
0.15
mA
IQDDL
VDD(L) = 15 V,
IN(UL,VL.WL) = 0 V
VDD(L) − COM(L)
4.80
mA
IPDDH
Operating VDD Supply Current
VDD(H) = 15 V, fPWM = 20
kHz, duty = 50%, applied
to one PWM signal input
for High−Side
VDD(UH) − COM(H),
VDD(VH) − COM(H),
VDD(WH) − COM(H)
0.30
mA
IPDDL
VDD(L) = 15 V, fPWM = 20
kHz, duty = 50%, applied
to one PWM signal input
for Low−Side
VDD(L) − COM(L)
15.5
mA
IQBS
Quiescent VBS Supply Current
VBS = 15 V,
IN(UH,VH.WH) = 0 V
VB(U) − VS(U),
VB(V) − VS(V),
VB(W) − VS(W)
0.30
mA
IPBS
Operating VBS Supply Current
VDD = VBS = 15 V,
fPWM = 20 kHz, duty =
50%, applied to one PWM
signal input for High−Side
VB(U) − VS(U),
VB(V) − VS(V),
VB(W) − VS(W)
12.0
mA
VFOH
Fault Output Voltage
VDD = 15 V, VSC = 0 V, VFO Circuit: 4.7 kW to 5 V
Pull−up
4.5
V
VFOL
VDD = 15 V, VSC = 1 V, VFO Circuit: 4.7 kW to 5 V
Pull−up
0.50
V
ISEN
Sensing Current of Each
Sense IGBT
VDD = 15 V, VIN = 5 V,
RSC = 0 W, No Connection
of Shunt Resistor at
NU,V.W terminal
IC = 35 A
36.0
mA
VSC(ref)
Short Circuit Trip Level
VDD = 15 V (Note 8)
CSC − COM(L)
0.43
0.50
0.57
V
ISC
Short Circuit Current Level
for Trip
RSC = 16 W (±1%), No Connection of Shunt Re-
sistor at NU,V,W Terminal (Note 8)
70
A
UVDDD
Supply Circuit Under−Voltage
Protection
Detection Level
10.3
12.8
V
UVDDR
Reset Level
10.8
13.3
V
UVBSD
Detection Level
9.5
12.0
V
UVBSR
Reset Level
10.0
12.5
V
tFOD
Fault−Out Pulse Width
CFOD = Open
(Note 9)
50
ms
CFOD = 2.2 nF
1.7
ms
VIN(ON)
ON Threshold Voltage
Applied between IN(UH,VH.WH) − COM(H)
IN(UL,VL.WL) − COM(L)
2.6
V
VIN(OFF)
OFF Threshold Voltage
0.8
V
RTH
Resistance of Thermistor
at TTH = 25°C
See Figure 6
(Note 10)
47
kW
at TTH = 100°C
2.9
kW
8. Short−circuit current protection functions only at the low−sides because the sense current is divided from main current at low−side IGBTs.
Inserting the shunt resistor for monitoring the phase current at NU, NV, NW terminal, the trip level of the short−circuit current is changed.
9. The fault−out pulse width tFOD depends on the capacitance value of CFOD according to the following approximate equation :
tFOD = 0.8 × 106 × CFOD
10.TTH is the temperature of thermistor itself. To know case temperature (TC), conduct experiments considering the application.



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