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ASPM34 数据表(PDF) 8 Page - ON Semiconductor |
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ASPM34 数据表(HTML) 8 Page - ON Semiconductor |
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8 / 15 page ![]() NFVA23512NP2T www.onsemi.com 8 BOOTSTRAP DIODE PART (TJ as specified) Symbol Parameter Conditions Min. Typ. Max. Unit VF Forward Voltage IF = 1.0 A, TJ = 25°C − 2.2 − V trr Reverse−Recovery Time IF = 1.0 A, dIF/dt = 50 A/ms, TJ = 25°C − 80 − ns CONTROL PART (TJ = 25°C) Symbol Parameter Conditions Min. Typ. Max. Unit IQDDH Quiescent VDD Supply Current VDD(H) = 15 V, IN(UH,VH.WH) = 0 V VDD(UH) − COM(H), VDD(VH) − COM(H), VDD(WH) − COM(H) − − 0.15 mA IQDDL VDD(L) = 15 V, IN(UL,VL.WL) = 0 V VDD(L) − COM(L) − − 4.80 mA IPDDH Operating VDD Supply Current VDD(H) = 15 V, fPWM = 20 kHz, duty = 50%, applied to one PWM signal input for High−Side VDD(UH) − COM(H), VDD(VH) − COM(H), VDD(WH) − COM(H) − − 0.30 mA IPDDL VDD(L) = 15 V, fPWM = 20 kHz, duty = 50%, applied to one PWM signal input for Low−Side VDD(L) − COM(L) − − 15.5 mA IQBS Quiescent VBS Supply Current VBS = 15 V, IN(UH,VH.WH) = 0 V VB(U) − VS(U), VB(V) − VS(V), VB(W) − VS(W) − − 0.30 mA IPBS Operating VBS Supply Current VDD = VBS = 15 V, fPWM = 20 kHz, duty = 50%, applied to one PWM signal input for High−Side VB(U) − VS(U), VB(V) − VS(V), VB(W) − VS(W) − − 12.0 mA VFOH Fault Output Voltage VDD = 15 V, VSC = 0 V, VFO Circuit: 4.7 kW to 5 V Pull−up 4.5 − − V VFOL VDD = 15 V, VSC = 1 V, VFO Circuit: 4.7 kW to 5 V Pull−up − − 0.50 V ISEN Sensing Current of Each Sense IGBT VDD = 15 V, VIN = 5 V, RSC = 0 W, No Connection of Shunt Resistor at NU,V.W terminal IC = 35 A − 36.0 − mA VSC(ref) Short Circuit Trip Level VDD = 15 V (Note 8) CSC − COM(L) 0.43 0.50 0.57 V ISC Short Circuit Current Level for Trip RSC = 16 W (±1%), No Connection of Shunt Re- sistor at NU,V,W Terminal (Note 8) − 70 − A UVDDD Supply Circuit Under−Voltage Protection Detection Level 10.3 − 12.8 V UVDDR Reset Level 10.8 − 13.3 V UVBSD Detection Level 9.5 − 12.0 V UVBSR Reset Level 10.0 − 12.5 V tFOD Fault−Out Pulse Width CFOD = Open (Note 9) 50 − − ms CFOD = 2.2 nF 1.7 − − ms VIN(ON) ON Threshold Voltage Applied between IN(UH,VH.WH) − COM(H) IN(UL,VL.WL) − COM(L) − − 2.6 V VIN(OFF) OFF Threshold Voltage 0.8 − − V RTH Resistance of Thermistor at TTH = 25°C See Figure 6 (Note 10) − 47 − kW at TTH = 100°C − 2.9 − kW 8. Short−circuit current protection functions only at the low−sides because the sense current is divided from main current at low−side IGBTs. Inserting the shunt resistor for monitoring the phase current at NU, NV, NW terminal, the trip level of the short−circuit current is changed. 9. The fault−out pulse width tFOD depends on the capacitance value of CFOD according to the following approximate equation : tFOD = 0.8 × 106 × CFOD 10.TTH is the temperature of thermistor itself. To know case temperature (TC), conduct experiments considering the application. |
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