Wideband, High Linearity,

Low Noise Amplifier, 0.4 GHz to 7.5 GHz

Data Sheet

ADL8104

Rev. 0

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FEATURES

Single positive supply (self biased)

High OIP2: 52 dBm typical at 0.6 GHz to 7.5 GHz

High gain: 15 dB typical at 0.6 GHz to 6 GHz

High OIP3: 32 dBm typical

Low noise figure: 3.5 dB typical at 0.4 GHz to 6 GHz

RoHS-compliant, 3 mm × 3 mm, 16-lead LFCSP

APPLICATIONS

Test instrumentation

Military communications

FUNCTIONAL BLOCK DIAGRAM

12

11

10

1

3

4

9

2

GND

NC

NC

NC

GND

NC

Figure 1.

GENERAL DESCRIPTION

The ADL8104 is a gallium arsenide (GaAs), monolithic

microwave integrated circuit (MMIC), pseudomorphic high

electron mobility transistor (pHEMT), low noise, wideband,

high linearity amplifier that operates from 0.4 GHz to 7.5 GHz.

The ADL8104 provides a typical gain of 15 dB at 0.6 GHz to

6 GHz, a 3.5 dB typical noise figure at 0.4 GHz to 6 GHz, a

20 dBm typical output power for 1 dB compression (OP1dB) at

0.6 GHz to 6 GHz, and a typical output third-order intercept

(OIP3) of 32 dBm at 0.6 GHz to 6 GHz, requiring only 150 mA

from a 5 V drain supply voltage. The low noise amplifier has a

high output second-order intercept (OIP2) of 52 dBm typical at

0.6 GHz to 6 GHz, making the ADL8104 suitable for military

and test instrumentation applications.

The ADL8104 also features inputs and outputs that are

internally ac-coupled and the bias inductor is also integrated,

making the ADL8104 ideal for surface-mounted technology

(SMT)-based, high density applications.

The ADL8104 is housed in an RoHS-compliant, 3 mm × 3 mm,

16-lead LFCSP.