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ADRF5515BCPZN-R7 数据表(PDF) 4 Page - Analog Devices |
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ADRF5515BCPZN-R7 数据表(HTML) 4 Page - Analog Devices |
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4 / 15 page ![]() ADRF5515 Data Sheet Rev. 0 | Page 4 of 15 Parameter Test Conditions/Comments Min Typ Max Unit At ANT-CHA, ANT-CHB PD-CHAB = 0 V, BP-CHA = BP-CHB = 5 V 9 dB PAR LTE full lifetime average, 3.3 GHz to 4.0 GHz 43 dBm 7 dB PAR LTE single event (<10 sec) average1 46 dBm TCASE Range2 −40 +105 °C Junction Temperature at Maximum TCASE Receive operation3 132 °C Transmit operation3 134 °C DIGITAL INPUT SWCTRL-CHAB, PD-CHAB Low (VIL) 0 0.7 V High (VIH) 1.4 VDD V BP-CHA, BP-CHB Low (VIL) 0 0.3 V High (VIH) 1.0 VDD V SUPPLY CURRENT (IDD) VDD1-CHx and VDD2-CHx = 5 V per channel High Gain Mode 86 mA Low Gain Mode 36 mA Power-Down Mode 12 mA Transmitter Current (Switch) SWVDD-CHAB = 5 V 1.3 mA DIGITAL INPUT CURRENTS SWCTRL-CHAB, PD-CHAB, BP-CHA, BP-CHB = 5 V per channel SWCTRL-CHAB 0.084 mA PD-CHAB 0.19 mA BP-CHA, BP-CHB 0.19 mA 1 Peak power >53 dBm has not been evaluated. 2 Measured at the exposed pad. 3 See Table 5 and Table 6. |
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