Dual-Channel, 3.3 GHz to 4.0 GHz,

20 W Receiver Front End

Data Sheet

ADRF5515

Rev. 0

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FEATURES

Integrated dual-channel RF front end

2-stage LNA and high power silicon SPDT switch

On-chip bias and matching

Single-supply operation

Gain

High gain mode: 33 dB typical at 3.6 GHz

Low gain mode: 16 dB typical at 3.6 GHz

Low noise figure

High gain mode: 1.0 dB typical at 3.6 GHz

Low gain mode: 1.0 dB typical at 3.6 GHz

High isolation

RXOUT-CHA and RXOUT-CHB: 45 dB typical

TERM-CHA and TERM-CHB: 60 dB typical

Low insertion loss: 0.45 dB typical at 3.6 GHz

Full lifetime

LTE average power (9 dB PAR): 43 dBm

High OIP3 (high gain mode): 32 dBm typical

Power-down mode and low gain mode for LNA

Low supply current

High gain mode: 86 mA typical at 5 V

Low gain mode: 36 mA typical at 5 V

Power-down mode: 12 mA typical at 5 V

Positive logic control

6 mm × 6 mm, 40-lead LFCSP

Pin compatible with the ADRF5545A, 10 W version

APPLICATIONS

Wireless infrastructure

TDD massive multiple input and multiple output and active

antenna systems

TDD-based communication systems

GENERAL DESCRIPTION

The ADRF5515 is a dual-channel, integrated RF, front-end,

multichip module designed for time division duplexing (TDD)

applications. The device operates from 3.3 GHz to 4.0 GHz.

The ADRF5515 is configured in dual channels with a cascading,

two-stage, LNA and a high power silicon SPDT switch.

In high gain mode, the cascaded two-stage LNA and switch

offer a low noise figure of 1.0 dB and a high gain of 33 dB at

3.6 GHz with an output third-order intercept point (OIP3) of

32 dBm (typical). In low gain mode, one stage of the two-stage

LNA is in bypass, providing 16 dB of gain at a lower current of

36 mA. In power-down mode, the LNAs are turned off and the

device draws 12 mA.

FUNCTIONAL BLOCK DIAGRAM

1

GND

2

GND

3

ANT-CHA

4

GND

5

SWCTRL-CHAB

6

SWVDD-CHAB

7

GND

8

ANT-CHB

9

GND

10

GND

23 GND

24 BP-CHB

25 NIC

26 PD-CHAB

27 BP-CHA

28 GND

29 RXOUT-CHA

30 GND

22 RXOUT-CHB

21 GND

ADRF5515

Figure 1.

In transmit operation, when RF inputs are connected to a

termination pin (TERM-CHA or TERM-CHB), the switch

provides low insertion loss of 0.45 dB and handles long-term

evolution (LTE) average power (9 dB peak to average ratio

(PAR)) of 43 dBm for full lifetime operation.

The ADRF5515 is pin-compatible with the ADRF5545A, 10 W

version, which operates from 2.4 GHz to 4.2 GHz.

The ADRF5515 does not require any matching components at

the RF ports that are internally matched to 50 Ω. The ANT and

TERM ports are also internally ac-coupled. Therefore, only

receiver ports require external dc blocking capacitors.

The device comes in an RoHS compliant, compact, 6 mm ×

6 mm, 40-lead LFCSP.