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LM3134KT 数据表(PDF) 2 Page - Shanghai Leiditech Electronic Technology Co., Ltd |
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LM3134KT 数据表(HTML) 2 Page - Shanghai Leiditech Electronic Technology Co., Ltd |
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2 / 4 page ![]() ■ Electrical Characteristics (TJ=25℃ unless otherwise noted) Parameter Symbol Conditions Min Typ Max Units Static Parameter Drain-Source Breakdown Voltage BVDSS VGS= 0V, ID=250μA 20 V Zero Gate Voltage Drain Current IDSS VDS=20V,VGS=0V 1 μA Gate-Body Leakage Current IGSS VGS= ±10V, VDS=0V 2.5 ± 10 μA VGS= ±8V, VDS=0V 500 ± 2000 nA Gate Threshold Voltage VGS(th) VDS= VGS, ID=250μA 0.35 0.75 1.1 V Static Drain-Source On-Resistance RDS(ON) VGS= 4.5V, ID=0.65A 130 250 mΩ VGS= 2.5V, ID=0.3A 180 350 Diode Forward Voltage C VSD IS=0.5A,VGS=0V 1.2 V Maximum Body-Diode Continuous Current IS 0.75 A Dynamic Parameters B Input Capacitance Ciss VDS=10V,VGS=0V,f=1MHZ 110 pF Output Capacitance Coss 18 Reverse Transfer Capacitance Crss 15 Switching Parameters B Total Gate Charge Qg VGS=4.5V,VDS=10V,ID=0.5A 1.1 nC Gate Source Charge Qgs 0.19 Gate Drain Charge Qgd 0.27 Turn-on Delay Time tD(on) VGS=4.5V,VDD=10V,RG=10Ω,ID=0.5A 6.7 ns Turn-on Rise Time tr 4.8 Turn-off Delay Time tD(off) 17.3 Turn-off Fall Time tf 7.4 A. Repetitive Rating: Pulse width limited by maximum junction temperature. B. These parameters have no way to verify. C. Pulse Test: Pulse Width≤300us, Duty Cycle≤0.5%. LM3134KT Rev : www.leiditech.com 01.06.2018 2/4 |
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