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LM3134KT 数据表(PDF) 2 Page - Shanghai Leiditech Electronic Technology Co., Ltd

部件名 LM3134KT
功能描述  N-Channel Enhancement Mode Fidld Effect Transistor
PDF  4 Pages
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制造商  LEIDITECH [Shanghai Leiditech Electronic Technology Co., Ltd]
网页  http://www.leiditech.com
标志 LEIDITECH - Shanghai Leiditech Electronic Technology Co., Ltd

LM3134KT 数据表(HTML) 2 Page - Shanghai Leiditech Electronic Technology Co., Ltd

  LM3134KT Datasheet HTML 1Page - Shanghai Leiditech Electronic Technology Co., Ltd LM3134KT Datasheet HTML 2Page - Shanghai Leiditech Electronic Technology Co., Ltd LM3134KT Datasheet HTML 3Page - Shanghai Leiditech Electronic Technology Co., Ltd LM3134KT Datasheet HTML 4Page - Shanghai Leiditech Electronic Technology Co., Ltd  
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Electrical Characteristics (TJ=25℃ unless otherwise noted)
Parameter
Symbol
Conditions
Min
Typ
Max
Units
Static Parameter
Drain-Source Breakdown Voltage
BVDSS
VGS= 0V, ID=250μA
20
V
Zero Gate Voltage Drain Current
IDSS
VDS=20V,VGS=0V
1
μA
Gate-Body Leakage Current
IGSS
VGS= ±10V, VDS=0V
2.5
±
10
μA
VGS= ±8V, VDS=0V
500
±
2000
nA
Gate Threshold Voltage
VGS(th)
VDS= VGS, ID=250μA
0.35
0.75
1.1
V
Static Drain-Source On-Resistance
RDS(ON)
VGS= 4.5V, ID=0.65A
130
250
VGS= 2.5V, ID=0.3A
180
350
Diode Forward Voltage C
VSD
IS=0.5A,VGS=0V
1.2
V
Maximum Body-Diode Continuous Current
IS
0.75
A
Dynamic Parameters B
Input Capacitance
Ciss
VDS=10V,VGS=0V,f=1MHZ
110
pF
Output Capacitance
Coss
18
Reverse Transfer Capacitance
Crss
15
Switching Parameters B
Total Gate Charge
Qg
VGS=4.5V,VDS=10V,ID=0.5A
1.1
nC
Gate Source Charge
Qgs
0.19
Gate Drain Charge
Qgd
0.27
Turn-on Delay Time
tD(on)
VGS=4.5V,VDD=10V,RG=10Ω,ID=0.5A
6.7
ns
Turn-on Rise Time
tr
4.8
Turn-off Delay Time
tD(off)
17.3
Turn-off Fall Time
tf
7.4
A. Repetitive Rating: Pulse width limited by maximum junction temperature.
B. These parameters have no way to verify.
C. Pulse Test: Pulse Width≤300us, Duty Cycle≤0.5%.
LM3134KT
Rev :
www.leiditech.com
01.06.2018
2/4



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