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LM3134KT 数据表(PDF) 1 Page - Shanghai Leiditech Electronic Technology Co., Ltd |
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LM3134KT 数据表(HTML) 1 Page - Shanghai Leiditech Electronic Technology Co., Ltd |
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1 / 4 page ![]() Product Summary ● VDS 20V ● ID 0.75A ● RDS(ON)( at VGS=4.5V) < 250 mohm ● RDS(ON)( at VGS=2.5V) < 350 mohm ● ESD Protected Up to 3.0KV (HBM) General Description ● Trench Power LV MOSFET technology Applications ● Load/Power Switching ● Interfacing Switching ● Logic Level Shift ■ Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-source Voltage VDS 20 V Gate-source Voltage VGS ± 12 V Drain Current TA=25℃ @ Steady State ID 0.75 A TA=70℃ @ Steady State 0.6 Pulsed Drain Current A IDM 3.0 A Total Power Dissipation @ TA=25℃ PD 0.15 W Thermal Resistance Junction-to-Ambient @ Steady State RθJA 833 ℃/ W Junction and Storage Temperature Range TJ ,TSTG -55~+150 ℃ ■ Ordering Information (Example) PREFERED P/N PACKING CODE Marking MINIMUM PACKAGE(pcs) INNER BOX QUANTITY(pcs) OUTER CARTON QUANTITY(pcs) DELIVERY MODE LM3134KT KF 8000 7“ reel Enhancement Mode Fidld Effect Transistor N-Channel LM3134KT Rev : www.leiditech.com 01.06.2018 1/4 Moisture Sensitivity: Level 3 per J-STD-020 ● High Power and current handing capability ● |
类似零件编号 - LM3134KT |
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类似说明 - LM3134KT |
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