Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain–to–Source Breakdown Voltage

(VGS = 0 Vdc, ID = 250 µAdc)

V(BR)DSS

50

–

–

Vdc

Zero Gate Voltage Drain Current

(VDS = 25 Vdc, VGS = 0 Vdc)

(VDS = 50 Vdc, VGS = 0 Vdc)

(VDS = 50 Vdc, VGS = 0 Vdc, TJ = 125°C)

IDSS

–

–

–

–

–

–

0.1

15

60

µAdc

Gate–Body Leakage Current (VGS = ± 20 Vdc, VDS = 0 Vdc)

IGSS

–

–

±60

µAdc

ON CHARACTERISTICS (Note 1.)

Gate–Source Threaded Voltage

(VDS = VGS, ID = 1.0 mAdc)

VGS(th)

0.8

–

2.0

Vdc

Static Drain–to–Source On–Resistance

(VGS = 5.0 Vdc, ID = 100 mAdc)

rDS(on)

–

5.0

10

Ohms

Transfer Admittance

(VDS = 25 Vdc, ID = 100 mAdc, f = 1.0 kHz)

|yfs|

50

–

–

mS

DYNAMIC CHARACTERISTICS

Input Capacitance

(VDS = 5.0 Vdc)

Ciss

–

30

–

pF

Output Capacitance

(VDS = 5.0 Vdc)

Coss

–

10

–

Transfer Capacitance

(VDG = 5.0 Vdc)

Crss

–

5.0

–

SWITCHING CHARACTERISTICS (Note 2.)

Turn–On Delay Time

td(on)

–

2.5

–

ns

Rise Time

(VDD = –15 Vdc, ID = –2.5 Adc,

tr

–

1.0

–

Turn–Off Delay Time

(VDD

15 Vdc, ID

2.5 Adc,

RL = 50 Ω)

td(off)

–

16

–

Fall Time

tf

–

8.0

–

Gate Charge

QT

–

6000

–

pC

SOURCE–DRAIN DIODE CHARACTERISTICS

Continuous Current

IS

–

–

0.130

A

Pulsed Current

ISM

–

–

0.520

Forward Voltage (Note 2.)

VSD

–

2.5

–

V

1. Pulse Test: Pulse Width

≤ 300 µs, Duty Cycle ≤ 2%.

2. Switching characteristics are independent of operating junction temperature.

TYPICAL ELECTRICAL CHARACTERISTICS

0

0.3

0.4

0.1

0.6

0.2

Figure 1. Transfer Characteristics

1

1.5

2

2.5

3

VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)

Figure 2. On–Region Characteristics

VDS = 10 V

150°C

25°C

-55°C

02

4

10

0

0.15

0.2

VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)

6

0.05

8

0.3

0.1

3.5

0.5

0.25

13

9

57

3.25 V

2.75 V

2.25 V

2.5 V

3.0 V

VGS = 3.5 V

4

0.35

0.4

0.5

0.45

TJ = 25°C

LMSS84W

Rev : 01.06.2014

2/4

www.leiditech.com