LMSS84W datasheet(1/4 Pages) LEIDITECH

部件名	LMSS84W

功能描述	POWER MOSFET 130 mAmps, 50 Volts

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制造商	LEIDITECH [Shanghai Leiditech Electronic Technology Co., Ltd]

网页	http://www.leiditech.com

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SOT –323

Power MOSFET

130 mAmps, 50 Volts

P–Channel SOT–323

These miniature surface mount MOSFETs reduce power loss

conserve energy, making this device ideal for use in small power

management circuitry. Typical applications are dc–dc converters, load

switching, power management in portable and battery–powered

products such as computers, printers, cellular and cordless telephones.

• Energy Efficient

• Miniature SOT–323 Surface Mount Package Saves Board Space

Symbol

Value

Unit

Drain–to–Source Voltage

VDSS

-50

Vdc

Gate–to–Source Voltage – Continuous

VGS

± 20

Vdc

Drain Current

– Continuous @ TA = 25°C

– Pulsed Drain Current (tp ≤ 10 µs)

ID

IDM

-130

-520

mA

Total Power Dissipation @ TA = 25°C

PD

225

mW

Operating and Storage Temperature

Range

TJ,Tstg

– 55 to

150

°C

Thermal Resistance – Junction–to–Ambient

RθJA

556

°C/W

Maximum Lead Temperature for Soldering

Purposes, for 10 seconds

TL

260

°C

Rating

MAXIMUM RATINGS (TJ = 25 C unless otherwise noted)

°

3 Drain

1

2

-

Gate

Source

Marking Diagram

PD

W

W = Work Week

• Pb-Free Package is available.

Device

Package

Shipping

SOT-323

10000/Tape&Reel

ORDERING INFORMATION

LMSS84W

SOT-323

3000/Tape&Reel

LMSS84W

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Total Device Dissipation FR–5 Board

(Note 3.) TA = 25°C

Derate above 25

°C

PD

225

1.8

mW

mW/

°C

Thermal Resistance, Junction to Ambient

RθJA

556

°C/W

Total Device Dissipation

Alumina Substrate,(Note 4.) TA = 25°C

Derate above 25

°C

PD

300

2.4

mW

mW/

°C

Thermal Resistance, Junction to Ambient

RθJA

417

°C/W

Junction and Storage Temperature

TJ, Tstg

–55 to

+150

°C

LMSS84W

Rev : 01.06.2014

1/4

www.leiditech.com

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