JCS2N70RH-O-R-N-B datasheet(3/5 Pages) DOINGTER

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Max. Diode Forward Current

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ISM

Max. Pulsed Forward Current

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VSD

Source-Drain Diode Forward Voltage2

ID=2A

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1.4

trr

Reverse Recovery Time

IF=2A,VGS=0V

diF/dt=100A/μs(Note 3)

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260

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Qrr

Reverse Recovery Charge

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1.09

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Notes:

Typical Characteristics： (TA=25℃ unless otherwise noted)

1, L=

45mH, IAS=2A, VDD=50V, RG=25Ω, Starting TJ =25°C

2, Repetitive Rating : Pulse width limited by maximum junction temperature

3, Pulse Test : Pulse Width

≤ 300μs, Duty Cycle ≤ 2%

4, Essentially Independent of Operating Temperature

012

= 20V

GS = 10V

※ Note: T

J = 25

℃

D, Drain Current [A]

0.2

0.4

0.6

0.8

1.0

1.2

1.4

-1

25℃

150℃

※Note:

1. V

GS = 0V

2. 250μ s Pulse Test

SD , Source-Drain Voltage [V]

Figure 3. On-Resistance Variation vs.

Drain Current and Gate Voltage

Figure 4. Body Diode Forward Voltage

Variation vs. Source Current and

Figure 2. Transfer Characteristics

Figure 1. On-Region Characteristics

-1

Top :

15.0 V

10.0 V

8.0 V

7.0 V

6.5 V

6.0 V

Bottom: 5.5 V

※ Note :

1. 250μ s Pulse Test

2. T

= 25℃

, Drain-Source Voltage [V]

2468

-1

※ Note

1. V

DS = 50V

2. 250μ s Pulse Test

-55℃

150℃

25℃

GS , Gate-Source Voltage [V]

JCS2N70RH-O-R-N-B

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