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JCS2N70RH-O-R-N-B 数据表(PDF) 4 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. |
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JCS2N70RH-O-R-N-B 数据表(HTML) 4 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. |
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4 / 5 page ![]() www.doingter.cn — — Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics 10 -1 10 0 10 1 0 100 200 300 400 500 C iss = C gs + C gd (C ds = shorted) C oss = Cds + Cgd C rss = Cgd ※ Note ; 1. V GS = 0 V 2. f = 1 MHz C rss C oss C iss V DS, Drain-Source Voltage [V] 02 468 10 0 2 4 6 8 10 12 V DS = 350V V DS = 140V V DS = 560V ※ Note : I D = 2 A Q G, Total Gate Charge [nC] 10 0 10 1 10 2 10 3 10 -2 10 -1 10 0 10 1 1 ms DC 100 ms 10 ms 100 µs Operation in This Area is Limited by R DS(on) ※ Notes : 1. T C = 25 o C 2. T J = 150 o C 3. Single Pulse V DS , Drain-Source Voltage [V] 25 50 75 100 125 150 0.0 0.5 1.0 1.5 2.0 T C, Case Temperature [ ℃] Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs. Case Temperature Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature -100 -50 0 50 100 150 200 0.8 0.9 1.0 1.1 1.2 ※Note: 1. V GS = 0 V 2. I D =250μ A T J, Junction Temperature [ o C] -100 -50 0 50 100 150 200 0.0 0.5 1.0 1.5 2.0 2.5 3.0 ※ Note: 1. V GS = 10 V 2. I D = 3.1 A T J, Junction Temperature [ o C] 4 JCS2N70RH-O-R-N-B |
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