| 数据搜索系统,热门电子元器件搜索 |
|
UTT50P04L-TN3-R 数据表(PDF) 1 Page - VBsemi Electronics Co.,Ltd |
|
|
|||||||||||||||||||||||||||||
UTT50P04L-TN3-R 数据表(HTML) 1 Page - VBsemi Electronics Co.,Ltd |
|
1 / 9 page ![]() FEATURES • TrenchFET® power MOSFET • Package with low thermal resistance • 100 % Rg and UIS tested Notes a. Package limited. b. Pulse test; pulse width 300 μs, duty cycle 2 %. c. When mounted on 1" square PCB (FR4 material). d. Parametric verification ongoing. PRODUCT SUMMARY VDS (V) -40 RDS(on) () at VGS = -10 V 0.012 RDS(on) () at VGS = -4.5 V 0.015 ID (A) -50 Configuration Single S G D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage VDS -40 V Gate-Source Voltage VGS ± 20 Continuous Drain Current TC = 25 °C a ID -50 A TC = 125 °C -39 Continuous Source Current (Diode Conduction) a IS -50 Pulsed Drain Current b IDM -200 Single Pulse Avalanche Current L = 0.1 mH IAS -40 Single Pulse Avalanche Energy EAS 80 mJ Maximum Power Dissipation b TA = 25 °C PD 3 W TC = 25 °C 136 TC = 125 °C 45 Operating Junction and Storage Temperature Range TJ, Tstg -55 to +175 °C THERMAL RESISTANCE RATINGS PARAMETER SYMBOL LIMIT UNIT Junction-to-Ambient PCB Mount c RthJA 50 °C/W Junction-to-Case (Drain) RthJC 1.1 P-Channel 4 0 V (D-S) MOSFET TO-252 S G D Top View E-mail:China@VBsemi TEL:86-755-83251052 www.VBsemi.tw UTT50P04L-TN3-R 1 |
类似零件编号 - UTT50P04L-TN3-R |
|
类似说明 - UTT50P04L-TN3-R |
|
|
|
链接网址 |
| ALLDATASHEET是否为您带来帮助? [ DONATE ] |
关于 Alldatasheet | 广告服务 | 联系我们 | 隐私政策 | 数据表链接 | 链接交换 | 制造商名单 All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |