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UTT50P04L-TN3-R 数据表(PDF) 3 Page - VBsemi Electronics Co.,Ltd

部件名 UTT50P04L-TN3-R
功能描述  P-Channel 4 0 V (D-S) MOSFET
PDF  9 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
制造商  VBSEMI [VBsemi Electronics Co.,Ltd]
网页  www.VBsemi.com
标志 VBSEMI - VBsemi Electronics Co.,Ltd

UTT50P04L-TN3-R 数据表(HTML) 3 Page - VBsemi Electronics Co.,Ltd

  UTT50P04L-TN3-R Datasheet HTML 1Page - VBsemi Electronics Co.,Ltd UTT50P04L-TN3-R Datasheet HTML 2Page - VBsemi Electronics Co.,Ltd UTT50P04L-TN3-R Datasheet HTML 3Page - VBsemi Electronics Co.,Ltd UTT50P04L-TN3-R Datasheet HTML 4Page - VBsemi Electronics Co.,Ltd UTT50P04L-TN3-R Datasheet HTML 5Page - VBsemi Electronics Co.,Ltd UTT50P04L-TN3-R Datasheet HTML 6Page - VBsemi Electronics Co.,Ltd UTT50P04L-TN3-R Datasheet HTML 7Page - VBsemi Electronics Co.,Ltd UTT50P04L-TN3-R Datasheet HTML 8Page - VBsemi Electronics Co.,Ltd UTT50P04L-TN3-R Datasheet HTML 9Page - VBsemi Electronics Co.,Ltd  
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TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
Output Characteristics
On-Resistance vs. Drain Current
Gate Charge
Transfer Characteristics
Capacitance
On-Resistance vs. Junction Temperature
0
20
40
60
80
100
0
VGS = 10 V thru 5 V
3 V
VDS - Drain-to-Source Voltage (V)
12
9
6
315
4 V
0.00
0.01
0.02
0.03
0.05
0
20406080
100
ID - Drain Current (A)
VGS = 4.5 V
0.04
VGS = 10 V
Qg - Total Gate Charge (nC)
0
2
4
6
8
10
0
ID = 50 A
VDS = 20 V
50
40
30
20
0
6
0
1
0
20
40
60
80
100
0
TC = 125 °C
- 55 °C
25 °C
VGS - Gate-to-Source Voltage (V)
8
6
4
210
VDS - Drain-to-Source Voltage (V)
0
1000
2000
3000
4000
5000
0
Ciss
Coss
Crss
35
30
25
20
15
10
540
0.5
0.8
1.1
1.4
1.7
2.0
175
VGS = 10 V
ID = 30 A
TJ - Junction Temperature (°C)
- 50
150
125
100
75
50
25
0
- 25
E-mail：China@VBsemi TEL:86-755-83251052
www.VBsemi.tw
UTT50P04L-TN3-R
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