UT9435G-S08-R datasheet(1/8 Pages) VBSEMI

部件名	UT9435G-S08-R

功能描述	P-Channel 30-V (D-S) MOSFET

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制造商	VBSEMI [VBsemi Electronics Co.,Ltd]

网页	www.VBsemi.com

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P-Channel 30-V (D-S) MOSFET

FEATURES

•

Halogen-free According to IEC 61249-2-21

Definition

•

TrenchFET® Power MOSFET

•

Compliant to RoHS Directive 2002/95/EC

PRODUCT SUMMARY

VDS (V)

RDS(on) (Ω)ID (A)

- 30

0.042 at VGS = - 10 V

- 5.8

0.055 at VGS = - 6 V

- 5.0

0.060 at VGS = - 4.5 V

- 4.4

SD

S

D

G

D

SO-8

5

6

7

8

Top View

2

3

4

1

S

G

D

P-Channel MOSFET

Notes:

a. Surface Mounted on 1" x 1" FR4 board.

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Parameter

Symbol

10 s

Steady State

Unit

Drain-Source Voltage

VDS

- 30

V

Gate-Source Voltage

VGS

± 20

Continuous Drain Current (TJ = 150 °C)

a

TA = 25 °C

ID

- 5.8

- 4.1

A

TA = 70 °C

- 4.6

- 3.2

Pulsed Drain Current

IDM

- 30

Continuous Source Current (Diode Conduction)a

IS

- 2.3

- 1.1

Maximum Power Dissipationa

TA = 25 °C

PD

2.5

1.3

W

TA = 70 °C

1.6

0.8

Operating Junction and Storage Temperature Range

TJ, Tstg

- 55 to 150

°C

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

Maximum Junction-to-Ambienta

t

≤ 10 s

RthJA

40

50

°C/W

Steady State

70

95

Maximum Junction-to-Foot (Drain)

Steady State

RthJF

24

30

UT9435G-S08-R

1

E-mail：China@VBsemi TEL:86-755-83251052

www.VBsemi.tw

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