UT9435G-S08-R datasheet(3/8 Pages) VBSEMI

部件名	UT9435G-S08-R

功能描述	P-Channel 30-V (D-S) MOSFET

PDF	8 Pages

Scroll/Zoom	100%

制造商	VBSEMI [VBsemi Electronics Co.,Ltd]

网页	www.VBsemi.com

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3 / 8 page

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Output Characteristics

On-Resistance vs. Drain Current

Gate Charge

1234

VGS = 10 V thru 6 V

VDS - Drain-to-Source Voltage (V)

3 V

5 V

4 V

0.00

0.03

0.06

0.09

0.12

0.15

ID - Drain Current (A)

VGS = 6 V

VGS = 4.5 V

VGS = 10 V

0.0

3.2

6.4

9.6

12.8

16.0

VDS = 15 V

ID = 3.5 A

Qg - Total Gate Charge (nC)

Transfer Characteristics

Capacitance

On-Resistance vs. Junction Temperature

1234

TC = 125 °C

- 55 °C

25 °C

VGS - Gate-to-Source Voltage (V)

220

440

660

880

1100

VDS - Drain-to-Source Voltage (V)

Crss

Coss

Ciss

0.6

0.8

1.0

1.2

1.4

1.6

- 50

- 25

100

125

150

VGS = 10 V

ID = 5.7 A

TJ - Junction Temperature (°C)

UT9435G-S08-R

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