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CP10C60 数据表(PDF) 1 Page - First Silicon Co., Ltd

部件名 CP10C60
功能描述  Silicon Planar PNPN Thyristor (12A SCR)
PDF  2 Pages
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制造商  FS [First Silicon Co., Ltd]
网页  http://www.firstsilicon.co.kr/
标志 FS - First Silicon Co., Ltd

CP10C60 数据表(HTML) 1 Page - First Silicon Co., Ltd

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SEMICONDUCTOR
TECHNICAL DATA
CP10C60
2019. 02. 06
1/2
Revision No : 0
Silicon Planar PNPN Thyristor (12A SCR)
MAIN FEATURES
Symbol
value
unit
IT(RMS)
12
A
VDRM/VRRM
600
V
ITSM
120
A
GENERAL DESCRIPTION
Glass passivated triacs in a plastic envelope,
intended for use in applications requiring
high bidirectional transient andblocking
voltage capability and high thermal cycling performance.
Typical applications include motor control,
industrial and domestic lighting, heating and static switching.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
e
u
l
a
v
r
e
t
e
m
a
r
a
p
l
o
b
m
y
s
unit
IT(RMS)
RMS on-state current (full sine wave)
TC=90℃
t=10ms
120
ITSM
Non repetitive surge peak on-state current (full sine wave, Tj =25
℃)
t=8.3ms
130
A
IGM
Peak gate current
4
A
PG(AV)
Average gate power dissipation
Tj=125
0.5
W
Tstg
Tj
Storage junction temperature range
Operating junction temperature range
-40 to +150
-40 to +125
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test
conditions
Min
Max
Unit
Rated repetitive peak off-state/reverse voltage
VDRM,VRRM
ID=10
μA
600
V
Rated repetitive peak off-state current
IDRM, IRRM
VD=6
V
0
2
10
μA
On-state voltage
VTM
IT=23A
1.75
V
20
mA
Gate trigger current
IGT
VD=12V
RL=100
Ω
1.30
Gate trigger voltage
VGT
VD=12V
RL=100
Ω
Holding current
IH
IT =100mA IG=20mA
20
mA
TO-220F
1. KATHODE
2. ANODE
3. GATE
=0.1A
I T
=0.1A
I T
1.4
TO-220F
A
12
V
A
A
B
C
C
D
D
E
E
F
G
H
H
1 52 MAX
1 52 MAX
J
K
L
M
L
N
N
N
O
Q
R
R
1
2
3
M
DIM
MILLIMETERS
10 16
0 20
+
_
15 00
0 20
+
_
3 00
0 20
+
_
0 625±0 125
3 50 typ
0 45
0 1
+
_
3 80
0 2
+
_
13 20
0 20
+
_
2 54
0 2
+
_
4 50
0 2
+
_
6 36
0 3
+
_
2 70
0 20
+
_
2 7 typ
16 80
0 4
+
_


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