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CP10C60 数据表(PDF) 2 Page - First Silicon Co., Ltd

部件名 CP10C60
功能描述  Silicon Planar PNPN Thyristor (12A SCR)
PDF  2 Pages
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制造商  FS [First Silicon Co., Ltd]
网页  http://www.firstsilicon.co.kr/
标志 FS - First Silicon Co., Ltd

CP10C60 数据表(HTML) 2 Page - First Silicon Co., Ltd

  CP10C60 Datasheet HTML 1Page - First Silicon Co., Ltd CP10C60 Datasheet HTML 2Page - First Silicon Co., Ltd  
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2019. 02. 06
2/2
Revision No : 0
Typical Characteristics
TYN610F
Figure 1: Maximum average power dissipation
versus average on-state current
Figure
2:
Correlation
between
maximum
average
power
dissipation
and
maximum
allowable temperature (T amb and Tlead)
P(W)
I
(A)
T(AV)
360°
α
α = 180°
DC
α = 120°
α = 90°
α = 30°
α = 60°
12
10
8
6
4
2
0
0
123
45
6
8
7
9
T
(°C)
amb
0
20
40
60
80
100
120
140
125
120
100
105
115
110
P(W)
T
(°C)
case
12
10
8
6
4
2
0
α = 180°
R = 6°C/W
th
R = 4°C/W
th
R = 2°C/W
th
R = 0°C/W
h
Figure 3: Average on-state current versus case
temperature
Figure
4:
Relative
variation
of
thermal
impedance versus pulse duration
Figure 5: Relative variation of gate trigger
current versus junction temperature
Figure 6: Surge peak on-state current versus
number of cycles
Figure 7: Non-repetitive surge peak on-state
current for a sinusoidal pulse with width
tp < 10 ms, and corresponding values of I²t
Figure 8: On-state characteristics (maximum
values)
I
(A)
T(AV)
12
10
8
6
4
2
0
0
10
20
30
40
60
70
90
110
120
50
80
100
130
T
(°C)
case
α = 180°
D.C.
K=[Z
/R
th(j-c)
th(j-c)]
t (s)
p
Z h(j-c)
Z h(j-a)
1
0.1
0.01
1E-3
1E-2
1E-1
1E+0
1E+1
1E+2
5E+2
T (°C)
j
IGT
IH & IL
2.5
2
1.5
1
0.5
0
-20
-30
-40
0
10
-10
20
40
30
50
60
70
80
90
100 110
I
(A)
TSM
Number of cycles
T initial=25°C
j
t =10ms
p
One cycle
120
100
80
60
40
20
0
0
0
0
1
0
0
1
0
1
1
I
(A), I t (A s)
TSM
2
2
t (ms)
p
I t
2
ITSM
T initial = 25°C
j
10
100
1
2
5
10
I
(A)
TM
1000
100
10
1
0
1
2
3
4
5
V
(V)
TM
V =0.82V
R =24m
T max.:
j
t0
d
Ω
Tj=max
T =25°C
j
IGT,IH,IL [Tj]/IGT,IH,IL [Tj=25°C]



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