UD4606Q-S08-R datasheet(9/14 Pages) VBSEMI

部件名	UD4606Q-S08-R

功能描述	N- and P-Channel 30 V (D-S) MOSFET

PDF	14 Pages

Scroll/Zoom	100%

制造商	VBSEMI [VBsemi Electronics Co.,Ltd]

网页	www.VBsemi.com

标志

9 / 14 page

P-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Source-Drain Diode Forward Voltage

Threshold Voltage

0.0

0.2

0.4

0.6

0.8

1.0

1.2

0.01

0.001

0.1

100

TJ = 25 °C

TJ = 150 °C

SD - Source-to-Drain Voltage (V)

- 0.4

- 0.1

0.2

0.5

0.8

- 50

- 25

100

125

150

ID =5mA

ID = 250 μA

J - Temperature (°C)

On-Resistance vs. Gate-to-Source Voltage

Single Pulse Power, Junction-to-Ambient

0.00

0.03

0.06

0.09

0.12

0.15

012

345

TJ =25 °C

TJ = 125 °C

ID =8 A

GS - Gate-to-Source Voltage (V)

00.01

0.1

Time (s)

Safe Operating Area, Junction-to-Ambient

0.01

100

0.01

0.1

10 s

10 ms

0.1

TA = 25 °C

Single Pulse

1ms

BVDSS Limited

100 ms

Limited by RDS(on)*

DS - Drain-to-Source Voltage (V)

* V

GS > minimum VGS at which RDS(on) is specified

UD4606Q-S08-R

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