UD4606Q-S08-R datasheet(2/14 Pages) VBSEMI

2 / 14 page

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

Parameter

Symbol

Test Conditions

Min.

Typ.a

Max.

Unit

Static

Drain-Source Breakdown Voltage

VDS

VGS = 0 V, ID = 250 µA

N-Ch

VGS = 0 V, ID = - 250 µA

P-Ch

VDS Temperature Coefficient

ΔVDS/TJ

ID = 250 µA

N-Ch

mV/°C

ID = - 250 µA

P-Ch

- 34

VGS(th) Temperature Coefficient

ΔVGS(th)/TJ

ID = 250 µA

N-Ch

- 4.1

ID = - 250 µA

P-Ch

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = 250 µA

N-Ch

VDS = VGS, ID = - 250 µA

P-Ch

2.0

Gate-Body Leakage

IGSS

VDS = 0 V, VGS = ± 12 V

N-Ch

± 100

VDS = 0 V, VGS = ± 12 V

P-Ch

± 100

Zero Gate Voltage Drain Current

IDSS

VDS = 30 V, VGS = 0 V

N-Ch

µA

VDS = - 30 V, VGS = 0 V

P-Ch

- 1

VDS = 30 V, VGS = 0 V, TJ = 55 °C

N-Ch

VDS = - 30 V, VGS = 0 V, TJ = 55 °C

P-Ch

- 10

On-State Drain Currentb

ID(on)

VDS = 5 V, VGS = 10 V

N-Ch

VDS = - 5 V, VGS = - 10 V

P-Ch

- 20

Drain-Source On-State Resistanceb

RDS(on)

VGS = 10 V, ID = 6.8 A

N-Ch

0.0

VGS = - 10 V, ID = - 8 A

P-Ch

0.0

VGS = 8 V, ID = 6.7 A

N-Ch

0.0

VGS = - 8 V, ID = - 6.5 A

P-Ch

0.0

VGS = 4.5 V, ID = 6.6 A

N-Ch

0.0

VGS = - 4.5 V, ID = - 5 A

P-Ch

0.0

Forward Transconductanceb

gfs

VDS = 15 V, ID = 6.8 A

N-Ch

VDS = - 15 V, ID = - 6.7 A

P-Ch

Dynamica

Input Capacitance

Ciss

N-Channel

VDS = 20 V, VGS = 0 V, f = 1 MHz

P-Channel

VDS = - 20 V, VGS = 0 V, f = 1 MHz

N-Ch

510

P-Ch

620

Output Capacitance

Coss

N-Ch

P-Ch

115

Reverse Transfer Capacitance

Crss

N-Ch

P-Ch

Total Gate Charge

VDS = 20 V, VGS = 10 V, ID = 10 A

N-Ch

VDS = - 20 V, VGS = - 10 V, ID = - 10 A

P-Ch

41.5

N-Channel

VDS = 20 V, VGS = 4.5 V, ID = 10 A

P-Channel

VDS = - 20 V, VGS = - 4.5 V, ID = - 10 A

N-Ch

5.8

P-Ch

Gate-Source Charge

Qgs

N-Ch

1.6

P-Ch

4.3

Gate-Drain Charge

Qgd

N-Ch

P-Ch

Gate Resistance

f = 1 MHz

N-Ch

0.3

P-Ch

5.7

9.6

2.0

1.0

UD4606Q-S08-R

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