UD9926-S08-R datasheet(1/7 Pages) VBSEMI

部件名	UD9926-S08-R

功能描述	Dual N-Channel 20-V (D-S) MOSFET

PDF	7 Pages

Scroll/Zoom	100%

制造商	VBSEMI [VBsemi Electronics Co.,Ltd]

网页	www.VBsemi.com

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1 / 7 page

FEATURES

•

Halogen-free According to IEC 61249-2-21

Definition

•

TrenchFET® Power MOSFET

•

100 % Rg Tested

•

Compliant to RoHS Directive 2002/95/EC

PRODUCT SUMMARY

VDS (V)

RDS(on) (Ω)ID (A)

20

0.025 at VGS = 4.5 V

7.1

0.035 at VGS = 2.5 V

6.0

S1

D1

G1

D1

S2

D2

G2

D2

SO-8

5

6

7

8

Top View

2

3

4

1

N-Channel MOSFET

G1

D1

S1

N-Channel MOSFET

G2

D2

S2

Notes:

a. Surface Mounted on FR4 board, t

≤ 10 s.

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

VDS

20

V

Gate-Source Voltage

VGS

± 12

Continuous Drain Current (TJ = 150 °C)

a

TA = 25 °C

ID

7.1

A

TA = 70 °C

5.7

Pulsed Drain Current (10 µs Pulse Width)

IDM

40

Continuous Source Current (Diode Conduction)a

IS

1.7

Maximum Power Dissipationa

TA = 25 °C

PD

2

W

TA = 70 °C

1.3

Operating Junction and Storage Temperature Range

TJ, Tstg

- 55 to 150

°C

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Limit

Unit

Maximum Junction-to-Ambienta

RthJA

62.5

°C/W

Dual N-Channel 20-V (D-S) MOSFET

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UD9926-S08-R

1

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