UD9926-S08-R datasheet(3/7 Pages) VBSEMI

部件名	UD9926-S08-R

功能描述	Dual N-Channel 20-V (D-S) MOSFET

PDF	7 Pages

Scroll/Zoom	100%

制造商	VBSEMI [VBsemi Electronics Co.,Ltd]

网页	www.VBsemi.com

标志

3 / 7 page

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Output Characteristics

On-Resistance vs. Drain Current

Gate Charge

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

VDS - Drain-to-Source Voltage (V)

VGS = 5 V thru 3 V

2 V

1 V, 1.5 V

2.5 V

0.00

0.02

0.04

0.06

0.08

0.10

10203040

ID - Drain Current (A)

VGS = 2.5 V

VGS = 4.5 V

Qg - Total Gate Charge (nC)

VDS = 10 V

ID = 7.1 A

Transfer Characteristics

Capacitance

On-Resistance vs. Junction Temperature

0.0

0.5

1.0

1.5

2.0

2.5

3.0

VGS - Gate-to-Source Voltage (V)

TC = 125 °C

- 55 °C

25 °C

200

400

600

800

1000

VDS - Drain-to-Source Voltage (V)

Crss

Coss

Ciss

0.6

0.8

1.0

1.2

1.4

1.6

- 50

- 25

100

125

150

VGS = 4.5 V

ID = 7.1 A

TJ - Junction Temperature (°C)

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UD9926-S08-R

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