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SWK4840 数据表(PDF) 1 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. |
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SWK4840 数据表(HTML) 1 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. |
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1 / 4 page  www.doingter.cn — 1 — Description： This Dual N-Channel MOSFET uses advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications. Features： 1) VDS=40V,ID=7A,RDS(ON)<32mΩ@VGS=4.5V 2) Low gate charge. 3) Green device available. 4) Advanced high cell denity trench technology for ultra RDS(ON). 5) Excellent package for good heat dissipation. Absolute Maximum Ratings：(T C=25℃ unless otherwise noted) Symbol Parameter Ratings Units VDS Drain-Source Voltage 40 V VGS Gate-Source Voltage ±20 V ID Continuous Drain Current 7 A Continuous Drain Current-TC=100℃ 3 Pulsed Drain Current 1 20 EAS Single Pulse Avalanche Energy --- mJ PD Power Dissipation 1.56 W TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 ℃ Thermal Characteristics： Symbol Parameter Max Units RƟJL Maximum Junction-to-Lead --- ℃/W RƟJA Thermal Resistance,Junction to Ambient 80 G2 D1 D1 D2 D2 S1 G1 S2 SWK4840 |
类似零件编号 - SWK4840 |
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类似说明 - SWK4840 |
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