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SWK4840 数据表(PDF) 2 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

部件名 SWK4840
功能描述  N-Channel MOSFET uses advanced trench technology
PDF  4 Pages
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制造商  DOINGTER [SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.]
网页  http://www.doingter.cn/
标志 DOINGTER - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

SWK4840 数据表(HTML) 2 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

  SWK4840 Datasheet HTML 1Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. SWK4840 Datasheet HTML 2Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. SWK4840 Datasheet HTML 3Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. SWK4840 Datasheet HTML 4Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.  
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Electrical Characteristics：(T
C=25℃ unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain-Sourtce Breakdown Voltage
VGS=0V,ID=250μA
40
---
---
V
IDSS
Zero Gate Voltage Drain Current
VGS=0V, VDS=40V
---
---
1
μA
IGSS
Gate-Source Leakage Current
VGS=±20V, VDS=0A
---
---
±100
nA
On Characteristics
3
VGS(th)
GATE-Source Threshold Voltage
VGS=VDS, ID=250μA
1.2
1.6
2.5
V
RDS(ON)
Drain-Source On Resistance
3
VGS=10V,ID=3A
11
28
32
mΩ
GFS
Forward Transconductance
VDS=10V, ID=3A
---
6.5
---
S
Dynamic Characteristics
4
Ciss
Input Capacitance
VDS=25V, VGS=0V, f=1MHz
---
420
800
pF
Coss
Output Capacitance
---
65
120
Crss
Reverse Transfer Capacitance
---
40
80
Switching Characteristics
4
td(on)
Turn-On Delay Time
2.3
VDS=20V, ID=1A
RGEN=25Ω. VGS=4.5V,
---
3.2
6
ns
tr
Rise Time
2.3
---
8.6
16
ns
td(off)
Turn-Off Delay Time
2.3
---
18
36
ns
tf
Fall Time
2.3
---
6
12
ns
Qg
Total Gate Charge
2.3
VGS=4.5V, VDS=20V,
ID=3A
---
5.2
10
nC
Qgs
Gate-Source
Charge
2.3
---
1.2
2.4
nC
Qgd
Gate-Drain “Miller” Charge
2.3
---
2.5
5
nC
Drain-Source Diode Characteristics
VSD
Source-Drain Diode Forward Voltage
2
VGS=0V,IS=1A
---
0.7
1
V
ls
Maximum Body-Diode Continuous Current
---
---
5
A
SWK4840



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