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LTC4367 数据表(PDF) 20 Page - Analog Devices

部件名 LTC4367
功能描述  Low Quiescent Current Surge Stopper with 9m廓 MOSFET
PDF  24 Pages
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制造商  AD [Analog Devices]
网页  http://www.analog.com
标志 AD - Analog Devices

LTC4367 数据表(HTML) 20 Page - Analog Devices

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LTC4381
20
Rev. 0
For more information www.analog.com
APPLICATIONS INFORMATION
Next calculate the sense resistor (RSNS) value with a current
limit of greater than 1A with 20% tolerance (Equation 31).
RSNS =
50mV
ILIM
=
50mV
1.2A
= 41.67mΩ
(31)
We will use 40mΩ, which gives a current limit of 1.25A.
The load dump waveform can be represented as an
exponentially decaying waveform with a time constant of
0.2sec (Equation 32).
VIN = 100 V
[ ]
e−t/0.2 s[]
(32)
The LTC4381 clamps the VOUT at 56.7V, which means
that VDS and ITMR drops to zero when VIN drops to
56.7V. To find the time t1 when this happen, we use
Equation 33.
t1 = −0.2s •In
56.7V
100V
⎝⎜
⎠⎟ =
0.113s
(33)
VDS can be approximated as a triangular waveform with
a peak of 100V – 56.7V or 43.3V and a time base of
0.113sec. We take half of the peak, 21.65V to calculate
the ITMR (Equation 34).
ITMR = 0.0917
A
V
⎥  •  ID •RSNS
VDS
RDRN
−70 µA
[ ]
ITMR = 0.0917
A
V
⎥  •  1A •0.04Ω•
21.65V
100k
−70 µA
[ ]
ITMR = 44µA
CTMR =
t1 •ITMR
VTMR
CTMR =
0.113s• 44µA
1.215V
CTMR = 4.1µF
(34)
We shall use a 4.7μF capacitor for more margin. Next, we
need to make sure that the chosen CTMR allow enough
time to power up the output (Equation 35).
CTMR =
ITMR(UP) • tINRUSH
VTMR
tINRUSH =
VIN •COUT
IINRUSH
=
VIN •C2
IGATE(UP)
=
24V • 47nF
20µA
= 56.4ms
ITMR(UP) ≈1.5µA at power up:
VTMR =
1.5µA •56.4ms
4.7µF
≈18mV
(35)
Next, we need to check to makes sure that in the case of
a severe output short where VOUT = 0V, the power dis-
sipation in the MOSFET is also within the safe operating
area (Equation 36).
tOC =
4.7µF • 1.215V
98.1µA
= 58.2ms
(36)
The power dissipation in MOSFET is given by Equation 37.
P = 24V •
62mV
40mΩ
= 37.2W
P t
= 8.97W s
(37)
During an output overload or soft short, the voltage at the
OUT pin could stay at 3V or higher. The total overcurrent
fault time when VOUT = 3V is given by Equation 38.
tOC = 4.7µF •
1.215V
60.3µA
= 94.8ms
(38)
The power dissipation in MOSFET is given by Equation 39.
P = (24V – 3) •
50mV
40mΩ
= 26.25W
P t
= 8.08W s
(39)
These conditions are within the safe operating area of
the MOSFET.



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