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LTC4367 数据表(PDF) 20 Page - Analog Devices |
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LTC4367 数据表(HTML) 20 Page - Analog Devices |
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20 / 24 page ![]() LTC4381 20 Rev. 0 For more information www.analog.com APPLICATIONS INFORMATION Next calculate the sense resistor (RSNS) value with a current limit of greater than 1A with 20% tolerance (Equation 31). RSNS = 50mV ILIM = 50mV 1.2A = 41.67mΩ (31) We will use 40mΩ, which gives a current limit of 1.25A. The load dump waveform can be represented as an exponentially decaying waveform with a time constant of 0.2sec (Equation 32). VIN = 100 V [ ] e−t/0.2 s[] (32) The LTC4381 clamps the VOUT at 56.7V, which means that VDS and ITMR drops to zero when VIN drops to 56.7V. To find the time t1 when this happen, we use Equation 33. t1 = −0.2s •In 56.7V 100V ⎛ ⎝⎜ ⎞ ⎠⎟ = 0.113s (33) VDS can be approximated as a triangular waveform with a peak of 100V – 56.7V or 43.3V and a time base of 0.113sec. We take half of the peak, 21.65V to calculate the ITMR (Equation 34). ITMR = 0.0917 A V ⎡ ⎣ ⎢ ⎤ ⎦ ⎥ • ID •RSNS • VDS RDRN −70 µA [ ] ⎛ ⎝ ⎜ ⎞ ⎠ ⎟ ITMR = 0.0917 A V ⎡ ⎣ ⎢ ⎤ ⎦ ⎥ • 1A •0.04Ω• 21.65V 100k −70 µA [ ] ⎛ ⎝ ⎜ ⎞ ⎠ ⎟ ITMR = 44µA CTMR = t1 •ITMR VTMR CTMR = 0.113s• 44µA 1.215V CTMR = 4.1µF (34) We shall use a 4.7μF capacitor for more margin. Next, we need to make sure that the chosen CTMR allow enough time to power up the output (Equation 35). CTMR = ITMR(UP) • tINRUSH VTMR tINRUSH = VIN •COUT IINRUSH = VIN •C2 IGATE(UP) = 24V • 47nF 20µA = 56.4ms ITMR(UP) ≈1.5µA at power up: VTMR = 1.5µA •56.4ms 4.7µF ≈18mV (35) Next, we need to check to makes sure that in the case of a severe output short where VOUT = 0V, the power dis- sipation in the MOSFET is also within the safe operating area (Equation 36). tOC = 4.7µF • 1.215V 98.1µA = 58.2ms (36) The power dissipation in MOSFET is given by Equation 37. P = 24V • 62mV 40mΩ = 37.2W P t = 8.97W s (37) During an output overload or soft short, the voltage at the OUT pin could stay at 3V or higher. The total overcurrent fault time when VOUT = 3V is given by Equation 38. tOC = 4.7µF • 1.215V 60.3µA = 94.8ms (38) The power dissipation in MOSFET is given by Equation 39. P = (24V – 3) • 50mV 40mΩ = 26.25W P t = 8.08W s (39) These conditions are within the safe operating area of the MOSFET. |
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