UP9972L-TN3-R datasheet(3/4 Pages) DOINGTER

部件名	UP9972L-TN3-R

功能描述	N-Channel MOSFET uses advanced trench technology

PDF	4 Pages

Scroll/Zoom	100%

制造商	DOINGTER [SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.]

网页	http://www.doingter.cn/

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Typical Characteristics： (T

C=25℃ unless otherwise noted)

Notes:1. Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature

2. EAS condition : TJ=25℃,VDD=30V,VG=10V,L=0.5mH,Rg=25 ,IAS=16A

3. Pulse Test: Pulse Width≤300μs, Duty Cycle≤0.5%

FIGURE1:OUTPUT CHARACTERISTICS

VDS(V)

1.5

3.0

4.5

6.0

7.5

VGS (V)

FIGURE 2: TYPICAL TRANSFER CHARACTERISTICS

ID (A)

FIGURE 3:ON-RESISTANCE VS. DRAIN CURRENT

R DS(ON)

ID(A)

FIGURE 5:GATE CHARGE CHARACTERISTICS

0.0

0.2

0.4

0.6

0.8

1.0

FIGURE 4: BODY DIODE CHARACTERISTICS

IS(A)

VSD(V)

FIGURE 6:CAPACITANCE CHARACTERISTICS

QG(NC)

VGS (V)

125℃

TJ=125℃

VGS =3V

25℃

TJ=25℃

4.5V

10V

1.0E-05

1.0E-04

1.0E-03

1.0E-02

1.0E-01

1.0E+00

1.0E+01

VDS(V)

COSS

CRSS

CISS

3500

3000

2500

2000

1500

1000

500

VGS=4.5V

VGS=10V

VDS=30V

ID=30A

UP9972L-TN3-R

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