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UP9972L-TN3-R 数据表(PDF) 2 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

部件名 UP9972L-TN3-R
功能描述  N-Channel MOSFET uses advanced trench technology
PDF  4 Pages
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制造商  DOINGTER [SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.]
网页  http://www.doingter.cn/
标志 DOINGTER - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

UP9972L-TN3-R 数据表(HTML) 2 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

  UP9972L-TN3-R Datasheet HTML 1Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. UP9972L-TN3-R Datasheet HTML 2Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. UP9972L-TN3-R Datasheet HTML 3Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. UP9972L-TN3-R Datasheet HTML 4Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.  
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Electrical Characteristics：(T
C=25℃ unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain-Sourtce Breakdown Voltage
VGS=0V,ID=250μA
60
---
---
V
IDSS
Zero Gate Voltage Drain Current
VGS=0V, VDS=60V
---
---
1
μA
IGSS
Gate-Source Leakage Current
VGS=±20V, VDS=0A
---
---
±100
nA
On Characteristics
VGS(th)
GATE-Source Threshold Voltage
VGS=VDS, ID=250μA
1
1.6
2.5
V
RDS(ON)
Drain-Source On Resistance
3
VGS=10V,ID=30A
---
12
17
mΩ
VGS=4.5V,ID=20A
---
16
25
Dynamic Characteristics
Ciss
Input Capacitance
VDS=25V, VGS=0V, f=1MHz
---
2900
pF
Coss
Output Capacitance
---
140
Crss
Reverse Transfer Capacitance
---
124
Switching Characteristics
td(on)
Turn-On Delay Time
VDD=25V, ID=30A,
VGS=10V,RGEN=1.8Ω
---
7.4
ns
tr
Rise Time
---
5.1
ns
td(off)
Turn-Off Delay Time
---
28.2
ns
tf
Fall Time
---
5.5
ns
Qg
Total Gate Charge
VGS=10V, VDS=30V,
ID=30A
---
50
nC
Qgs
Gate-Source Charge
---
6
nC
Qgd
Gate-Drain “Miller” Charge
---
15
nC
Drain-Source Diode Characteristics
VSD
Source-Drain Diode Forward Voltage
VGS=0V,IS=30A
---
---
1.2
V
Is
Continuous Source Current
---
50
A
ISM
Pulsed Source Current
---
200
A
trr
Reverse Recovery Time
28
---
Ns
qrr
Reverse Recovery Charge
40
---
nc
IF=30A, dI/dt=100A/μs
UP9972L-TN3-R



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