V61M103C datasheet(1/5 Pages) VISHAY

部件名	V61M103C

功能描述	Dual High Voltage TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.37 V at IF = 5 A

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制造商	VISHAY [Vishay Siliconix]

网页	http://www.vishay.com

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V61M103C

www.vishay.com

Vishay General Semiconductor

Revision: 22-Dec-2020

1

Document Number: 98162

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Dual High Voltage TMBS® (Trench MOS Barrier Schottky) Rectifier

Ultra Low VF = 0.37 V at IF = 5 A

FEATURES

• Trench MOS Schottky technology

• Low forward voltage drop, low power losses

• High efficiency operation

• Solder bath temperature 275 °C maximum, 10 s,

per JESD 22-B106

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

TYPICAL APPLICATIONS

For use in high frequency converters, switching power

supplies, freewheeling diodes, OR-ing diode, DC/DC

converters, and reverse battery protection.

MECHANICAL DATA

Case: TO-220AB

Molding compound meets UL 94 V-0 flammability rating

Base

P/N-M3

-

halogen-free,

RoHS-compliant,

and

commercial grade

Terminals: matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

M3 suffix meets JESD 201 class 1A whisker test

Polarity: as marked

Mounting Torque: 10 in-lbs maximum

Note

(1) The heat generated must be less than the thermal conductivity from junction to ambient: dPD/dTJ <1/ RθJA

PRIMARY CHARACTERISTICS

IF(AV)

2 x 30 A

VRRM

100 V

IFSM

320 A

VF at IF = 30 A (125 °C)

0.63 V

TJ max.

175 °C

Package

TO-220AB

Circuit configuration

Common cathode

TO-220AB

1

2

3

PIN 1

PIN 2

CASE

PIN 3

MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)

PARAMETER

SYMBOL

V61M103C

UNIT

Maximum repetitive peak reverse voltage

VRRM

100

V

Maximum average forward rectified current (fig. 1)

per device

IF(AV)

60

A

per diode

30

Peak forward surge current 8.3 ms single half sine-wave superimposed

on rated load per diode

IFSM

320

A

Operating junction temperature range

TJ (1)

-40 to +175

°C

Storage temperature range

TSTG

-55 to +175

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类似说明 - V61M103C

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