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V61103C 数据表(PDF) 3 Page - Vishay Siliconix

部件名 V61103C
功能描述  Dual High Voltage TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.34 V at IF = 5 A
PDF  5 Pages
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制造商  VISHAY [Vishay Siliconix]
网页  http://www.vishay.com
标志 VISHAY - Vishay Siliconix

V61103C 数据表(HTML) 3 Page - Vishay Siliconix

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V61103C
www.vishay.com
Vishay General Semiconductor
Revision: 22-Dec-2020
3
Document Number: 98161
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
Fig. 1 - Forward Current Derating Curve
Fig. 2 - Forward Power Loss Characteristics Per Diode
Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode
Fig. 4 - Typical Reverse Characteristics Per Diode
Fig. 5 - Typical Junction Capacitance
Fig. 6 - Typical Transient Thermal Impedance Per Device
10
100
1000
10000
0
10
20
30
40
50
60
70
0
25
50
75
100
125
150
175
Axis Title
Case Temperature (°C)
T
C = 108.7 C, RthJC = 1.0 C/W
10
100
1000
10000
0
5.0
10.0
15.0
20.0
25.0
0
5
10
15
20
25
30
35
Axis Title
Average Forward Current (A)
D = 0.1
D = 0.2
D = 0.3
D = 0.5
D = 0.8
D = 1.0
D = tp/T
T
tp
10
100
1000
10000
0.1
1
10
100
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
Axis Title
Instantaneous Forward Voltage (V)
T
J = 100 °C
T
J = 125 °C
T
J = 25 °C
T
J = -40 C
T
J = 150 C
10
100
1000
10000
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
20
40
60
80
100
Axis Title
Percent of Rated Peak Reverse Voltage (%)
T
J = 150 °C
T
J = 125 °C
T
J = 100 °C
T
J = 25 °C
T
J = -40 C
10
100
1000
10000
100
1000
10 000
0.1
1
10
100
Axis Title
Reverse Voltage (V)
T
J = 25 °C,
f = 1.0 MHz,
V
sig = 50 mVp-p
10
100
1000
10000
0.1
1
10
0.01
0.1
1
10
100
Axis Title
t - Pulse Duration (s)
Junction to case



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