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STS3DPFS40 数据表(PDF) 2 Page - STMicroelectronics

部件名 STS3DPFS40
功能描述  P-CHANNEL 40V - 0.070ohm - 3A SO-8 STripFET MOSFET PLUS SCHOTTKY RECTIFIER
PDF  6 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STS3DPFS40 数据表(HTML) 2 Page - STMicroelectronics

  STS3DPFS40 Datasheet HTML 1Page - STMicroelectronics STS3DPFS40 Datasheet HTML 2Page - STMicroelectronics STS3DPFS40 Datasheet HTML 3Page - STMicroelectronics STS3DPFS40 Datasheet HTML 4Page - STMicroelectronics STS3DPFS40 Datasheet HTML 5Page - STMicroelectronics STS3DPFS40 Datasheet HTML 6Page - STMicroelectronics  
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STS3DPFS40
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THERMAL DATA
MOSFET ELECTRICAL CHARACTERISTICS (TCASE = 25
°C UNLESS OTHERWISE SPECIFIED)
OFF
ON (1)
DYNAMIC
Rthj-amb
(*)Thermal Resistance Junction-ambient MOSFET
62.5
°C/W
Rthj-amb
(*)Thermal Resistance Junction-ambient SCHOTTKY Maximum
100
°C/W
Tstg
Storage Temperature Range
-65 to 150
°C
Tl
Junction Temperature
150
°C
(*) Mounted on FR-4 board (Steady State)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V(BR)DSS
Drain-source
Breakdown Voltage
ID = 250 µA, VGS = 0
40
V
IDSS
Zero Gate Voltage
Drain Current (VGS =0)
VDS = Max Rating
1
µA
VDS = Max Rating, TC = 125 °C
10
µA
IGSS
Gate-body Leakage
Current (VDS =0)
VGS = ± 16 V
±100
nA
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
VGS(th)
Gate Threshold Voltage
VDS =VGS,ID = 250µA
2
34V
RDS(on)
Static Drain-source On
Resistance
VGS = 10V, ID = 1.5 A
0.070
0.1
Ω
ID(on)
On State Drain Current
VDS >ID(on) xRDS(on)max,
VGS =10V
3A
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
gfs (1)
Forward Transconductance
VDS >ID(on) xRDS(on)max,
ID = 1.5 A
6S
Ciss
Input Capacitance
VDS = 25V, f = 1 MHz, VGS =0
1190
pF
Coss
Output Capacitance
200
pF
Crss
Reverse Transfer
Capacitance
56
pF



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