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STS3DPFS40 数据表(PDF) 3 Page - STMicroelectronics

部件名 STS3DPFS40
功能描述  P-CHANNEL 40V - 0.070ohm - 3A SO-8 STripFET MOSFET PLUS SCHOTTKY RECTIFIER
PDF  6 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STS3DPFS40 数据表(HTML) 3 Page - STMicroelectronics

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STS3DPFS40
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note: 1. Pulsed: Pulse duration = 300
µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
SCHOTTCKY STATIC ELETTRICAL CHARACTERISTICS
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
td(on)
Turn-on Delay Time
VDD =20 V, ID = 1.5 A
RG = 4.7 Ω VGS =10 V
(see test circuit, Figure 3)
20
ns
tr
Rise Time
25
ns
Qg
Total Gate Charge
VDD =20 V, ID =3 A,
VGS =10 V
24.5
33
nC
Qgs
Gate-Source Charge
4
nC
Qgd
Gate-Drain Charge
5.5
nC
Symbol
Parameter
Test Condit ions
Min.
Typ.
Max.
Unit
td(off)
tf
Turn-off Delay Time
Fall Time
VDD =20 V, ID = 1.5 A,
RG =4.7Ω, VGS =10 V
(see test circuit, Figure 3)
100
22
ns
ns
td(off)
tf
tc
Off-voltage Rise Time
Fall Time
Cross-over Time
Vclamp =32 V, ID =3 A,
RG =4.7Ω, VGS =10 V
20
11
35
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ISD
Source-drain Current
3
A
ISDM (2)
Source-drain Current (pulsed)
12
A
VSD (1)
Forward On Voltage
ISD = 3 A, VGS =0
2V
trr
Reverse Recovery Time
ISD = 3 A, di/dt = 100A/µs,
VDD =15 V, Tj = 150°C
(see test circuit, Figure 5)
34
ns
Qrr
Reverse Recovery Charge
45
nC
IRRM
Reverse Recovery Current
2.6
A
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
IR(*)
Reversed Leakage Current
TJ =25 °C, VR =30 V
TJ = 125 °C, VR =30 V
0.03
0.2
100
mA
mA
VF(*)
Forward Voltage Drop
TJ =25 °C, IF =3 A
TJ = 125 °C, IF = 3 A
0.42
0.51
0.46
V
V



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