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FSB50825B 数据表(PDF) 7 Page - ON Semiconductor |
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FSB50825B 数据表(HTML) 7 Page - ON Semiconductor |
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7 / 14 page ![]() FSB50825B/FSB50825BS www.onsemi.com 7 RECOMMENDED OPERATING CONDITION Symbol Parameter Conditions Value Unit Min. Typ. Max. VPN Supply Voltage Applied Between P and N − 150 200 V VDD Control Supply Voltage Applied Between VDD and COM 13.5 15 16.5 V VBS High−Side Bias Voltage Applied Between VB and VS 13.5 15 16.5 V VIN(ON) Input ON Threshold Voltage Applied Between IN and COM 3.0 − VDD V VIN(OFF) Input OFF Threshold Voltage 0 − 0.6 V tdead Blanking Time for Preventing Arm−Short VDD = VBS = 13.5 ∼ 16.5 V, TJ ≤ 150°C 1.0 − − mS fPWM PWM Switching Frequency TJ ≤ 150°C − 15 − kHz 0123456 7 8 9 10 11 12 13 14 15 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 Built in Bootstrap Diode VF −IF Characteristic V F [V] Tc=255C Figure 2. Built in Bootstrap Diode Characteristics (Typ.) NOTE: 5. BVDSS is the Absolute Maximum Voltage Rating Between Drain and Source Terminal of Each MOSFET Inside Motion SPM 5 product. VPN Should be Sufficiently Less Than This Value Considering the Effect of the Stray Inductance so that VDS Should Not Exceed BVDSS in Any Case. 6. tON and tOFF Include the Propagation Delay Time of the Internal Drive IC. Listed Values are Measured at the Laboratory Test Condition, and They Can be Different According to the Field Applications Due to the Effect of Different Printed Circuit Boards and Wirings. Please see Figure 7 for the Switching Time Definition with the Switching Test Circuit of Figure 7. 7. The peak current and voltage of each MOSFET during the switching operation should be included in the Safe Operating Area (SOA). Please see Figure 6 for the RBSOA test circuit that is same as the switching test circuit. 8. VTS is only for sensing temperature of module and cannot shutdown MOSFETs automatically. 9. Built in bootstrap diode includes around 15 W resistance characteristic. Please refer to Figure 2. |
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