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FSB50825B 数据表(PDF) 7 Page - ON Semiconductor

部件名 FSB50825B
功能描述  Motion SPM 5 Series
PDF  14 Pages
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制造商  ONSEMI [ON Semiconductor]
网页  http://www.onsemi.com
标志 ONSEMI - ON Semiconductor

FSB50825B 数据表(HTML) 7 Page - ON Semiconductor

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7
RECOMMENDED OPERATING CONDITION
Symbol
Parameter
Conditions
Value
Unit
Min.
Typ.
Max.
VPN
Supply Voltage
Applied Between P and N
150
200
V
VDD
Control Supply Voltage
Applied Between VDD and COM
13.5
15
16.5
V
VBS
High−Side Bias Voltage
Applied Between VB and VS
13.5
15
16.5
V
VIN(ON)
Input ON Threshold Voltage
Applied Between IN and COM
3.0
VDD
V
VIN(OFF)
Input OFF Threshold Voltage
0
0.6
V
tdead
Blanking Time for Preventing Arm−Short VDD = VBS = 13.5 ∼ 16.5 V, TJ ≤ 150°C
1.0
mS
fPWM
PWM Switching Frequency
TJ ≤ 150°C
15
kHz
0123456
7
8
9
10
11
12
13
14
15
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
Built in Bootstrap Diode VF −IF Characteristic
V
F [V]
Tc=255C
Figure 2. Built in Bootstrap Diode Characteristics (Typ.)
NOTE: 5. BVDSS is the Absolute Maximum Voltage Rating Between Drain and Source Terminal of Each MOSFET Inside Motion SPM
5 product. VPN Should be Sufficiently Less Than This Value Considering the Effect of the Stray Inductance so that VDS Should
Not Exceed BVDSS in Any Case.
6. tON and tOFF Include the Propagation Delay Time of the Internal Drive IC. Listed Values are Measured at the Laboratory
Test Condition, and They Can be Different According to the Field Applications Due to the Effect of Different Printed Circuit
Boards and Wirings. Please see Figure 7 for the Switching Time Definition with the Switching Test Circuit of Figure 7.
7. The peak current and voltage of each MOSFET during the switching operation should be included in the Safe Operating
Area (SOA). Please see Figure 6 for the RBSOA test circuit that is same as the switching test circuit.
8. VTS is only for sensing temperature of module and cannot shutdown MOSFETs automatically.
9. Built in bootstrap diode includes around 15 W resistance characteristic. Please refer to Figure 2.



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